Nanostructure structure effect on transition in pi-cells

Abstract

It is well known that the operating state (bend state) of a pi-cell must be nucleated then uniformly spread the bend orientation in splay state before operation. In this study, the random distribution of silicon oxide nano-particles was investigated for decreasing the time of splay-to-bend transition in pi-cells. Under the optimum conditions, the 50% reduction of splay-to-bend transition time was found in nanostructure structure treated surfaces.