Browsing by Author "Chen, William P. -N."

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Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs
(2010-05-01)
Kuo, Jack J. -Y.
;
Chen, William P. -N.
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V(gst)) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility- fluctuation origin 1/f noise for the strained device in the high-vertical bar V(gst)vertical bar regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.
Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETs
(2009-06-01)
Kuo, Jack J. -Y.
;
Chen, William P. -N.
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter investigates the low-frequency noise characteristics and reports a new mechanism for uniaxial strained PMOSFETs. Through a comparison of the input-referred noise and the trap density of the gate dielectric/semiconductor interface between co-processed strained and unstrained devices, it is found that the tunneling attenuation length for channel carriers penetrating into the gate dielectric is reduced by uniaxial strain. The reduced tunneling attenuation length may result in smaller input-referred noise, which represents an intrinsic advantage of low-frequency noise performance stemming from process-induced strain.
Investigation of Low Frequency Noise in Uniaxial Strained PMOSFETs
(2009)
Kuo, Jack J. -Y.
;
Chen, William P. -N.
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low vertical bar V(gst)vertical bar regime, the 1/f noise is dominated by the carrier-number-fluctuations and the S(Id)/I(d)(2) is increased by the enhanced g(m)/I(d) for the strained device. Nevertheless, the S(Id)/I(d)(2) of the strained device is almost the same as the unstrained one at a given g(m)/I(d). Furthermore, with the application of uniaxial compressive strain, the attenuation length lambda is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced lambda may result in a smaller S(Vg). In the high vertical bar V(gst)vertical bar regime, the 1/f noise is dominated by the mobility-fluctuations and the S(Id)/I(d)(2) is increased due to the larger Hooge parameter for the strained device.