Browsing by Author "Chen, William P. N."

Now showing 1 - 5 of 5

A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs
(2006)
Chen, William P. N.
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Su, P.
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Wang, J. S.
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Lien, C. H.
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Chang, C. H.
Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs
(2007)
Wang, J. -S.
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Chen, William P. N.
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Shih, C. -H.
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Lien, C.
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Su, Pin
Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs
(2011-02-01)
Chen, William P. N.
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Kuo, Jack J. Y.
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Su, Pin
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
This letter provides an experimental assessment of surface-roughness-scattering-limited mobility (mu(SR)) under process-induced uniaxial strain and compares the strain sensitivity between mu(SR) and phonon-scattering-limited mobility (mu(PH)). By an accurate split C-V mobility extraction method, the mu(SR) of short-channel pMOSFETs was extracted at an ultralow temperature to suppress the phonon scattering mechanism. Our result indicates that mu(SR) has stronger stress sensitivity than mu(PH). Furthermore, the surface roughness mobility enhancement tends to increase as the vertical electric field increases. Our experimental findings confirm the previously reported results based on simulations.
Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETs
(2008-07-01)
Chen, William P. N.
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Su, Pin
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Goto, K.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
This letter provides an experimental assessment of Coulomb scattering mobility for advanced short-channel strained devices. By accurate mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel nMOSFETs. This letter indicates that the Coulomb mobility has significant stress dependency. Moreover, the stress sensitivity of the Coulomb mobility shows strong temperature, dependence. Because it is the interface scattering that counteracts the stress sensitivity of the bulk-impurity-limited mobility, further reducing the interface charges will be crucial to future mobility scaling.
Impact of Process-Induced Uniaxial Strain on the Temperature Dependence of Carrier Mobility in Nanoscale pMOSFETs
(2010-05-01)
Chen, William P. N.
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Kuo, Jack J. Y.
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter provides an experimental assessment of temperature dependence of mobility for advanced short-channel strained devices. By accurate split C-V mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on the temperature dependence of mobility and mobility enhancement in nanoscale pMOSFETs. Our study indicates that the strain sensitivity of hole mobility becomes less with increasing temperature, and it is consistent with previous mechanical-bending result. Furthermore, the carrier-scattering mechanism for the pMOSFET under uniaxial compressive strain tends to be more phonon limited at a given vertical electric field, which explains the larger drain current sensitivity to temperature present in the compressively strained PFET.