Browsing by Author "Chen, Y. -F."

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AlGaInAs multiple-quantum-well 1.2-mu m semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier
(2012-01-01)
Chen, Y. -F.
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Lee, Y. C.
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Huang, S. C.
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Huang, K. F.
;
Chen, Y. F.
An AlGaInAs multiple quantum well structure is reported as an effective gain medium of the in-well pumped high-peak-power semiconductor disk laser at 1.2 mu m. We use an Yb-doped pulsed fiber amplifier as the pump source to effectively optimize the output characteristics. The maximum average output power of 1.28 W and peak output power of 0.76 kW is obtained at 1225 nm lasing wavelength under 60 kHz pump repetition rate and 28 ns pump pulse width.
High-peak-power optically pumped AlGaInAs eye-safe laser at 500-kHz repetition rate with an intracavity diamond heat spreader
(2012-08-01)
Chen, Y. -F.
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Su, K. W.
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Chen, W. L.
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Huang, K. F.
;
Chen, Y. F.
"We report on a compact efficient high-repetition-rate (> 100 kHz) optically pumped AlGaInAs nanosecond eye-safe laser at 1525 nm. A diamond heat spreader bonded to the gain chip is employed to improve the heat removal. At a pump power of 13.3 W, the average output power at a repetition rate 200 kHz is up to 3.12 W, corresponding to a peak output power of 560 W. At a repetition rate 500 kHz, the maximum average power and peak power are found to be 2.32 W and 170 W, respectively."
High-power passively Q-switched Nd:YVO4 UV laser at 355 nm
(2012-03-01)
Huang, Y. J.
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Huang, Y. P.
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Chiang, P. Y.
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Liang, H. C.
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Su, K. W.
We report on an efficient high-power passively Q-switched UV laser at 355 nm. We take into account the second threshold criterion and the thermal-lensing effect to design and realize a compact reliable passively Q-switched Nd:YVO4 laser with Cr4+:YAG as a saturable absorber. At an incident pump power of 16.3W, the average output power at 1064 nm reaches 6.2 W with a pulse width of 7 ns and a pulse repetition rate of 56 kHz. Employing the developed passively Q-switched laser to perform the extra-cavity harmonic generations, the maximum average output powers at 532 nm and 355 nm are up to 2.2 W and 1.62 W, respectively.
InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm
(2007-01-10)
Huang, J. Y.
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Liang, H. C.
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Su, K. W.
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Lai, H. C.
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Chen, Y. -F.
A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained. (c) 2007 Optical Society of America.