AlGaInAs multiple-quantum-well 1.2-mu m semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier
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10.1007/s00340-011-4669-y
Abstract
An AlGaInAs multiple quantum well structure is reported as an effective gain medium of the in-well pumped high-peak-power semiconductor disk laser at 1.2 mu m. We use an Yb-doped pulsed fiber amplifier as the pump source to effectively optimize the output characteristics. The maximum average output power of 1.28 W and peak output power of 0.76 kW is obtained at 1225 nm lasing wavelength under 60 kHz pump repetition rate and 28 ns pump pulse width.