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AlGaInAs multiple-quantum-well 1.2-mu m semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier

dc.citation.epage62en_US
dc.citation.issue1en_US
dc.citation.spage57en_US
dc.citation.volume106en_US
dc.citation.woscount0
dc.contributor.authorChen, Y. -F.en_US
dc.contributor.authorLee, Y. C.en_US
dc.contributor.authorHuang, S. C.en_US
dc.contributor.authorHuang, K. F.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:21:35Z
dc.date.available2014-12-08T15:21:35Z
dc.date.issued2012-01-01en_US
dc.description.abstractAn AlGaInAs multiple quantum well structure is reported as an effective gain medium of the in-well pumped high-peak-power semiconductor disk laser at 1.2 mu m. We use an Yb-doped pulsed fiber amplifier as the pump source to effectively optimize the output characteristics. The maximum average output power of 1.28 W and peak output power of 0.76 kW is obtained at 1225 nm lasing wavelength under 60 kHz pump repetition rate and 28 ns pump pulse width.en_US
dc.identifier.doi10.1007/s00340-011-4669-yen_US
dc.identifier.issn0946-2171en_US
dc.identifier.journalAPPLIED PHYSICS B-LASERS AND OPTICSen_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00340-011-4669-yen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/15344
dc.identifier.wosnumberWOS:000299306400009
dc.language.isoen_USen_US
dc.titleAlGaInAs multiple-quantum-well 1.2-mu m semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifieren_US
dc.typeArticleen_US

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