Browsing by Author "Chen, Ying"

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Design of 18 similar to 26GHz Receiver with Wideband RF, LO and IF in 0.15 mu m GaAs pHEMT Process
(2017-01-01)
Chen, Ying
;
Yu, Zhong-I
;
Huang, Ching-Ying
;
Hsieh, Kuan-Han
;
Hu, Robert
This paper describes our progress in designing the K-band receiver in WIN 0.15 mu m GaAs pHEMT process. The LNA contains three stages of common-source transistors, and its noise performance has been optimized over the intended bandwidth; the following mixer is made of single-balanced transistors where the edge-coupled Marchand balun provides the required 18 similar to 26GHz differential-mode LO while active balun is used for combining the 8GHz IF signals. The conversion gain measured on-wafer at room temperature is around 20dB and the noise temperature is close to 300K, with overall power consumption 140mW, and the chip area is 1000x2500 mu m(2.) A close inspection on the wide-IF-band noise measurement procedure is also provided where the impact of conversion gain on the measured T-n is explored. This receiver circuit will facilitate the construction of large focal plane arrays where compact cryogenic receiver module is in urgent demand.
Microwave and Millimeter-Wave Cryogenic Wideband LNA Design and Characterization
(2015)
Chen, Ying
;
Li, Zheng-Kai
;
Wu, Kun-Long
;
Li, Bin
;
Hu, Robert
-This manuscript reports our progress in designing wideband LNAs for use in radio-astronomical receivers. These include two WIN-150nm and five WIN-100nm GaAs pHEMT LNAs. Following a general description of design methodology, the LNAs\' simulated and measured results at room temperature will be presented. To make these LNAs eligible for low temperature applications, a cryogenic noise measurement system using multi-point variable-temperature-load (VTL) method is constructed where the system is computer controlled, and both the noise calibration and de-embedding concerns are properly addressed. At 14K ambient temperature, the 5-10GHz LNA has its averaged T. equal to 8K and the 8-20GHz LNA has its T. around 10K
OMMIC 70nm-mHEMT LNA Design
(2017-01-01)
Chen, Ying
;
Wu, Kun-Long
;
Huang, Ching-Ying
;
Chang, Che-Kun
;
Sun, Xin
This paper describes our progress in the design of cryogenic LNAs using OMMIC 70nm mHEMT for the Square Kilometer-Array (SKA) project and the Shanghai 65-Meter radio astronomical telescope. Different LNAs covering the aggregate 1 similar to 40GHz frequency range are designed and measured on-wafer at room temperature, and T-n for the 1 similar to 10, 5 similar to 15, and 10 similar to 40GHz LNAs are 80K, 90K, and 120K, respectively, with the gain all larger than 20dB. One 1 similar to 10GHz LNA chip is then packaged and tested cryogenically, and the noise temperature improvement factor is 6 similar to 8, which is smaller than what can be obtained from the WIN pHEMT. Performance repeatability among different chips has been carried out.
Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices
(2020-03-01)
Majumdar, Swatilekha
;
Chen, Ying
;
Hudec, Boris
;
Hou, Tuo-Hung
;
Suri, Manan
In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO sigma /Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved.