Design of 18 similar to 26GHz Receiver with Wideband RF, LO and IF in 0.15 mu m GaAs pHEMT Process

Abstract

This paper describes our progress in designing the K-band receiver in WIN 0.15 mu m GaAs pHEMT process. The LNA contains three stages of common-source transistors, and its noise performance has been optimized over the intended bandwidth; the following mixer is made of single-balanced transistors where the edge-coupled Marchand balun provides the required 18 similar to 26GHz differential-mode LO while active balun is used for combining the 8GHz IF signals. The conversion gain measured on-wafer at room temperature is around 20dB and the noise temperature is close to 300K, with overall power consumption 140mW, and the chip area is 1000x2500 mu m(2.) A close inspection on the wide-IF-band noise measurement procedure is also provided where the impact of conversion gain on the measured T-n is explored. This receiver circuit will facilitate the construction of large focal plane arrays where compact cryogenic receiver module is in urgent demand.