Browsing by Author "Chen, Ying-Chen"

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A new simple unifying approach of finding the state equation model and its practical application
(2009-11-30)
Chen, Chung-Cheng
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Chien, Ting-Li
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Chen, Ying-Chen
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Lin, Wen-Jiun
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Yang, Shu-Hao
In the control signal process theory, the state equation is an important approach for modelling, analyzing and designing a wide range of systems. Furthermore, the state equation is often the most efficient form from the standpoint of computer simulation for highly complex systems. The existing researches exploit the fact that for networks containing dependent sources, bridging elements and coupling elements, the derivation of the closed-form state equation becomes rather complicated. On the other hand, a simple and valuable unifying approach of finding the state equations for complicated physical systems is successfully presented in the paper. The new unifying approach needs only the substitution theorem and the author's invented simple matrix operations. The main fascinating peculiarity of this approach is exposed in its systematic, graphic and human structure that improves the shortcomings of those traditional approaches. One comparative example is proposed to show the distinguished advantages our method offers over existing methods. In order to demonstrate the practical applicability, the paper has investigated an electronic operational-amplifier circuit that can be easily stabilized by our approach. (c) 2009 Elsevier Ltd. All rights reserved.
A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector
(2017-01-01)
Lin, Chih-Yang
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Chen, Ying-Chen
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Gu, Meiqi
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Pan, Chih-Hung
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Jin, Fu-Yuan
For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling ("seasoning effect"). Compatible current density (10(7)similar to 10(9) A/cm(2)) and selectivity (similar to 100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications.
Almost disturbance decoupling control of nonlinear MIMO uncertain system and application to half-car active suspension system
(2008)
Chien, T. L.
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Chen, C. C.
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Chiu, H. C.
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Cheng, H. W.
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Chen, Ying-Chen
This paper studies the tracking and almost disturbance decoupling problem of nonlinear multi-input multi-output uncertain systems based on the feedback linearisation approach. The main contribution of this study is to construct a controller, under appropriate conditions, such that the resulting closed-loop system is valid for any initial condition and bounded tracking signal with the following characteristics: input-to-state stability with respect to disturbance inputs and almost disturbance decoupling, i.e., the influence of disturbances on the L(2) norm of the output tracking error can be arbitrarily attenuated by changing some adjustable parameters. One example, which cannot be solved by the first paper on the almost disturbance decoupling problem, is proposed in this paper to exploit the fact that the tracking and the almost disturbance decoupling performances are easily achieved by the proposed approach. In order to demonstrate the practical applicability, the paper has investigated a famous half-car active suspension system.
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
(2017-07-07)
Lin, Chih-Yang
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Chen, Po-Hsun
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Chang, Ting-Chang
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Chang, Kuan-Chang
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Zhang, Sheng-Dong
This study proposes a method for a HfO2-based device to exhibit both resistive switching (RS) characteristics as resistive random access memory (RRAM) and selector characteristics by introducing vanadium (V) as the top electrode. This simple V/HfO2/TiN structure can demonstrate these two different properties depending on forming polarities. The RS mechanism is activated by a positive forming bias. In contrast, the selector property is induced by a negative forming bias. The material analyses firstly confirm the existence of V in the top electrode. Then the electrical measurements for the same V/HfO2/TiN structures but with different forming polarities were carried out to further investigate their DC sweeping characteristics to act as either a selector or RRAM device. Furthermore, reliability tests for both selector and RRAM devices were also conducted to confirm their switching stabilities. Finally, current fitting methods and temperature influence experiments were performed to investigate the carrier transport mechanisms. Finally, physical models were proposed to illustrate the selector property and RS mechanism for selector and RRAM devices, respectively. This simple device structure with its easy operating method accomplishes a significant advancement of devices combining both selector properties and RRAM for remarkable real applications in the near future.
Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory
(2013)
Chang, Yao-Feng
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Chen, Ying-Chen
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Li, Ji
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Xue, Fei
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Wang, Yanzhen
Control of AMIRA's ball and beam system via improved fuzzy feedback linearization approach
(2010-12-01)
Chien, Ting-Li
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Chen, Chung-Cheng
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Tsai, Ming-Chun
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Chen, Ying-Chen
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材料科學與工程學系
This paper first studies the tracking and almost disturbance decoupling problem of nonlinear AMIRA's ball and beam system based on the feedback linearization approach and fuzzy logic control. The main contribution of this study is to construct a controller, under appropriate conditions, such that the resulting closed-loop system is valid for any initial condition and bounded tracking signal with the following characteristics: input-to-state stability with respect to disturbance inputs and almost disturbance decoupling, i.e., the influence of disturbances on the 1,2 norm of the output tracking error can be arbitrarily attenuated by changing some adjustable parameters. One example, which cannot be solved by the first paper on the almost disturbance decoupling problem, is proposed in this paper to exploit the fact that the tracking and the almost disturbance decoupling performances are easily achieved by our proposed approach. The simulation results show that our proposed approach has achieved the almost disturbance decoupling performance perfectly. (C) 2010 Elsevier Inc. All rights reserved.
Direct Synthesis of Zr-Doped Ceria Nanotubes
(2009-04-02)
Chen, Ying-Chen
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Chen, Kuei-Bo
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Lee, Chi-Shen
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Lin, M. C.
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應用化學系
Zr-doped ceria nanotuhes (Zr(x)Ce(1-x)O(2)) Were obtained in a high yield from a hydrothermal reaction in an aqueous solution of NaOH with Ce(NO(3))(3)center dot 6H(2)O and ZrO(2) powder in a small proportion. The morphology and crystalline structure were characterized with X-ray diffraction, a scanning electron microscope, and a transmission electron microscope. Mechanisms for the growth of Zr-doped ceria nanotubes are proposed based oil the Kirkendall effect, the formation of the tubular structure is strongly dependent oil the precursor. This is the first report of a direct synthesis of cerium-oxide nanotubes in high yield. The surface area of the nanotubes is 76 m/g and their average pore size is similar to 52.2 nm, Catalytic measurements show that the nanotubes as synthesized are active for an oxygen-storage capacity and for ethanol reforming.
In Situ Observation of Au Nanostructure Evolution in Liquid Cell TEM
(2017-11-23)
Chen, Ying-Chen
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Chen, Jui-Yuan
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Wu, Wen-Wei
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材料科學與工程學系
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Department of Materials Science and Engineering
Gold nanostructures (NSs) have been widely investigated due to their unique properties. Understanding their growth behaviors during synthesis will be beneficial in designing and applying to many functional nanodevices. It is important to enrich the fundamental science and technology of the synthesis and characterization through real time evolution. In this work, we observed the dynamic growth of Au NSs by using liquid in situ transmission electron microscopy (TEM). The solution was sealed in a liquid cell, and the results indicated that the thicker solution layer tended to form multi twinned decahedral NSs; in contrast, nanoplates easily formed in the thinner solution layer. The silver halide model, relying on side-face structures, and the Wulff construction can be used to explain the formation of NSs. Additionally, we analyzed the growth rate of different morphologies to elucidate their growth behaviors. The growth mechanism and formation kinetics of different shapes of Au NSs were systematically studied, which provided direct evidence toward and extended the study of reaction kinetics for modifying the morphology of NSs.
Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
(2014-02-01)
Ji, Li
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Chang, Yao-Feng
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Fowler, Burt
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Chen, Ying-Chen
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Tsai, Tsung-Ming
We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.
Packing Principles for Donor-Acceptor Oligomers from Analysis of Single Crystals
(2016-08-09)
Huang, Chi-Feng
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Wu, San-Lien
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Huang, Yi-Fan
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Chen, Ying-Chen
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Chang, Shu-Ting
D-A conjugated molecules are complicated in both their molecular and their packing structures. In this perspective, we summarize more than 40 crystal lattices of conjugated oligomers to identify the morphological influence of each building block on the D-A molecules. These lattice structures reveal not only the packing preferences of the conjugated oligomers but also the conformational disorder in the lattices. The presence of this disorder in slowly grown crystals implies that attaining total long-range conformational order is challenging for D-A oligomers, which are structurally complicated and readily distorted and which have building blocks of incommensurate packing dimensions. In optoelectronic applications, a decreased duration of processing can prevent ordering and trap the thin films of D-A oligomers from becoming crystalline phases. Although D-A oligomers conform to packing principles in the formation of a single crystal, their phase behaviors in the formation of active thin films are much more difficult to comprehend. Continuous advances in methods of characterization are still strongly required for the steps of attaining a true structure property relation of D-A oligomers in active films for optoelectronic applications.
Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere Lithography
(2014)
Ji, Li
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Chang, Yao-Feng
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Fowler, Burt
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Chen, Ying-Chen
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Tsai, Tsung-Ming
SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
(2020-05-26)
Hsu, Yu-Lin
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Chang, Yao-Feng
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Chung, Wei-Min
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Chen, Ying-Chen
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Lin, Chao-Cheng
In this work, SiCxNy-based resistive switching memory by using a single precursor for the back end of line (BEOL) integration has been investigated. SiCxNy films were deposited on the aluminum (Al) substrates using plasma enhanced atomic layer deposition (PEALD) method. The effects of SiCxNy chemical structure with respect to resistive switching characteristics have been studied, and the results suggest that the resistive switching mechanism is dominated by the interfacial Schottky junction with SiCxNy composition. This work not only demonstrates a PEALD method in fabricating SiCxNy-based electronics active devices but also provides additional insights into the interaction between the electrical and chemical structures in bi-functional resistive switching or threshold switching behavior. A demonstrated PEALD tool with simple single-precursor for SiCxNy deposition shows excellent feasibility to be used as functional memory and selector devices, further giving the potential pathway for advanced BEOL process integration.
The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector
(2018-10-01)
Chen, Chun-Kuei
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Lin, Chih-Yang
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Chen, Po-Hsun
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Chang, Ting-Chang
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Shih, Chih-Cheng
In this paper, vanadium oxide (VOx) was chosen for the resistive switching layer in a typical resistive random access memory (PRAM) structure. During negative forming bias, we found an initial selector property. This indicates the presence of metal-insulator-transition characteristics in the VOx layer even without an annealing process. In order to study this phenomenon, material analyses were conducted, with results indicating that there are V-O stretching bonds and an oxide/vanadium ratio of nearly 2.2 (O/V. 2.2). In addition, the experimental results of the dc sweeping test indicated that off-state current gradually decreased after each cycle, meaning that the selectivity characteristics in the VOx selector could be improved. Endurance performance of our experimental devices reached 10(8), sufficient for integration with RRAM devices in a 1S1R array. To further investigate this special phenomenon, current fitting analysis and simulation analyses were conducted. The results of the fitting analysis indicated that the conduction mechanism for off-state current was Schottky emission and the Schottky distance increased with increasing numbers of cycles. In other words, oxide ions migrate toward the filament at low negative voltage during dc sweeping, causing the formation of VOx. Furthermore, the results of thermal field simulation analysis indicated that there is a thermal concentration effect in and around the filament. Thus, oxide ions more easily migrate toward the vanadium filament when a stronger electrical field is present around the filament during dc sweeping cycles. Finally, stable vanadium selector characteristics are obtained and a conduction filament behavior model is proposed.
The Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memory
(2014)
Chang, Yao-Feng
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Fowler, Burt
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Chen, Ying-Chen
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Ji, Li
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Zhou, Fei