Browsing by Author "Cheng, Chuan-An"

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2.5D Heterogeneously Integrated Bio-Sensing Microsystem for Multi-Channel Neural-Sensing Applications
(2014-01-01)
Huang, Po-Tsang
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Chou, Lei-Chun
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Huang, Teng-Chieh
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Wu, Shang-Lin
;
Wang, Tang-Shuan
2.5D Heterogeneously Integrated Microsystem for High-Density Neural Sensing Applications
(2014-12-01)
Huang, Po-Tsang
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Wu, Shang-Lin
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Huang, Yu-Chieh
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Chou, Lei-Chun
;
Huang, Teng-Chieh
Heterogeneously integrated and miniaturized neural sensing microsystems are crucial for brain function investigation. In this paper, a 2.5D heterogeneously integrated bio-sensing microsystem with mu-probes and embedded through-silicon-via (TSVs) is presented for high-density neural sensing applications. This microsystem is composed of mu-probes with embedded TSVs, 4 dies and a silicon interposer. For capturing 16-channel neural signals, a 24 x 24 mu-probe array with embedded TSVs is fabricated on a 5 x 5 mm2 chip and bonded on the back side of the interposer. Thus, each channel contains 6 x 6 mu-probes with embedded TSVs. Additionally, the 4 dies are bonded on the front side of the interposer and designed for biopotential acquisition, feature extraction and classification via low-power analog front-end (AFE) circuits, area-power-efficient analog-to-digital converters (ADCs), configurable discrete wavelet transforms (DWTs), filters, and a MCU. An on-interposer bus (mu-SPI) is designed for transferring data on the interposer. Finally, the successful in-vivo test demonstrated the proposed 2.5D heterogeneously integrated bio-sensing microsystem. The overall power of this microsystem is only 676.3 mu W for 16-channel neural sensing.
A TSV-Based Heterogeneous Integrated Neural-Signal Recording Device with Microprobe Array
(2014-01-01)
Chou, Lei-Chun
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Lee, Shih-Wei
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Cheng, Chuan-An
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Huang, Po-Tsang
;
Chang, Chih-Wei
Highly integrated and miniaturized neural sensing microsystems are crucial for brain function investigation and neural prostheses realization. This paper presents a TSV-based heterogeneous integrated neural-signal recording device with microprobe array. By TSV, microprobe array and CMOS circuit make connection on the opposite sides of the chip. By measurement results on electrical characteristics of devices and TSV, this recording device is ready for bio-medical applications.
Characterization of Temporary Bonding and Laser Release Using Polyimide and a 300-nm Photolysis Polymer System for High-Throughput 3-D IC Applications
(2017-03)
Cheng, Chuan-An
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Tsai, Tsung-Yen
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Huang, Yu-Hsiang
;
Lin, Chien-Hung
;
Lee, Chia-Lin
A new temporary bonding technology with an ultrafast laser-release process of less than 20 s is presented, where a 300-nm-thick photolysis polymer and polyimide are served as the release layer and adhesive layer, respectively. The submicrometer-thick polymer has the feature of high absorption of a 355-nm laser in contrast to polyimide during debonding procedures. In addition, the thin release layers of high chemical resistance and mechanical strength demonstrate their feasibility for handling process. Electrical characteristics of the devices before and after the laser-release process are investigated, showing no degradation. Thus, this technology scheme demonstrates its potential for temporary bonding and release in 3-D integration applications.
Effects of Bonding Technology and Thinning Process in Three-Dimensional Integration on Device Characteristics
(2012-10-01)
Lu, Cheng-Hsien
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Cheng, Chuan-An
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Ho, Chia-Hua
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Chen, Kuan-Neng
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電子工程學系及電子研究所
This research is to investigate the effects of bonding technology and thinning process on the electrical properties of 0.35 mu m technology node n-MOSFET devices. After the bonding process, by changing the bonding temperature up to 400 degrees C and bonding force up to 2.5 x 10(5) Pa, these devices still have the same electrical performances. In addition, thinning process was applied to investigate the stress which would affect the electrical properties of n-MOSFETs. The electrical performances of devices do not change for substrate thickness larger than 466 mu m.
Electrical Investigation of Cu Pumping in Through-Silicon Vias for BEOL Reliability in 3D Integration
(2015)
Cheng, Chuan-An
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Sugie, Ryuichi
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Uchida, Tomoyuki
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Chen, Kou-Hua
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Chiu, Chi-Tsung
It is crucial for Cu TSV to be reliable at the back-end-of--line (BEOL) procedure particularly at high temperature process step. Any unreliable Cu TSV may cause residual from thermal stress due to the mismatch of the coefficient of thermal expansion. Therefore, it is important to investigate on the behavior of Cu pumping whether it will affect the electrical performance in BEOL integration. Two sets of Cu pumping with pitch 30 mu m and 40 mu m were annealed to measure their resistance at the temperature lower than 250 degrees C. Based on the results, the narrow pitch of 30 mu m can be applied in post via last process below 250 degrees C for BEOL procedure in 3D integration.
Feasibility Investigation of Amorphous Silicon as Release Layer in Temporary Bonding for 3-D Integration and FOWLP Scheme
(2017-03-01)
Cheng, Chuan-An
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Huang, Yu-Hsiang
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Lin, Chien-Hung
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Lee, Chia-Lin
;
Yang, Shan-Chun
A reliable temporary bonding scheme with both inorganic amorphous silicon release layer and HD-3007 polyimide based on high 355-nm-wavelength laser absorption coefficient in release layer is proposed and investigated. Effects of laser absorption coefficient and laser ablation path are also studied to develop a high throughput laser ablation process. The bonding scheme can be achieved within the optimized temperature of 210 degrees C under 1 MPa bonding force. In addition, chemical resistance, mechanical strength with reliability assessment, and thermal stability test for bonded structure are inspected. There is no obvious degradation in electrical characterization after laser ablation, indicating that the temporary bonding scheme has high potential to be used for 3-D integration applications.
Polymer for Wafer-level Hybrid Bonding and Its Adhesion to Passivation Layer in 3D Integration
(2017-01-01)
Lu, Cheng-Hsien
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Kho, Yi-Tung
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Cheng, Chuan-An
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Huang, Yen-Jun
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Chen, Kuan-Neng
Hybrid bonding is one of the key technologies in 3D IC integration, which can integrate various functional chips using vertical interconnection to reduce RC delay and realize heterogeneous integration by bonding process. Conventional hybrid bonding uses oxide layer as the filling material between the metal interconnect, which can prevent oxidation of metal layer and enhance the bonding strength. However, there are some issues of oxide layer such as its poor stress absorption and the demand of surface flatness. Polymer is the potential material to replace oxide as hybrid bonding material because of its stress release property and better surface roughness tolerance. This paper investigates the adhesion properties of polymer and passivation layer and demonstrates perfect polymer-to-polymer wafer-level bonding results.
Study of a Novel Amorphous Silicon Temporary Bonding and Corresponding Laser Assisted De-bonding Technology
(2016)
Huang, Yu-Hsiang
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Liang, Hao-Wen
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Cheng, Chuan-An
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Lin, Chien-Hung
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Lee, Chia-Lin
A novel amorphous silicon temporary bonding and corresponding laser assisted de-bonding technology are investigated for the improvement of 3D integration. Excellent bonding results with real device wafer with alpha-IGZO thin-film transistor are shown at the bonding temperature of 210 degrees C, as well as outstanding performances for bonding strength, thermal stability, reliability and chemical resistance. Laser ablated amorphous silicon is proved stable and ultra-fast. Advantages of excellent bonding quality, lower cost and higher throughput demonstrate that this scheme can be a potential candidate in 3D integration platform.
Wafer-Level MOSFET with Submicron Photolysis Polymer Temporary Bonding Technology Using Ultra-Fast Laser Ablation for 3DIC Application
(2016)
Cheng, Chuan-An
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Huang, Yu-Hsiang
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Lin, Chicn-Hung
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Lee, Chia-Lin
;
Yang, Shan-Chun
A submicron photolysis polymer temporary bonding with ultra-fast laser de-bonding process of less than 20 s has been demonstrated where both photolysis polymer and polyimide are served as release layer and adhesive layer, respectively. In addition, the bonded structure provides high chemical resistance and mechanical strength for handling process. By measuring the electrical characteristics of devices before and after de-bond, it shows promising performance without degradation. Thus it can be a potential candidate for temporary bonding and de-bonding in 3D integration.