Study of a Novel Amorphous Silicon Temporary Bonding and Corresponding Laser Assisted De-bonding Technology

Abstract

A novel amorphous silicon temporary bonding and corresponding laser assisted de-bonding technology are investigated for the improvement of 3D integration. Excellent bonding results with real device wafer with alpha-IGZO thin-film transistor are shown at the bonding temperature of 210 degrees C, as well as outstanding performances for bonding strength, thermal stability, reliability and chemical resistance. Laser ablated amorphous silicon is proved stable and ultra-fast. Advantages of excellent bonding quality, lower cost and higher throughput demonstrate that this scheme can be a potential candidate in 3D integration platform.