Browsing by Author "Cheng, Yi-Li"

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Application of Supercritical CO(2) Fluid for Dielectric Improvement of SiO(x) Film
(2009-01-01)
Tsai, Chih-Tsung
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Cheng, Yi-Li
;
Kin, Kon-Tsu
In this paper the supercritical carbon dioxide (SCCO(2)) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (SiO(x)) film at 150 degrees C. After the treatment of SCCO(2) fluid mixed with ethyl alcohol and pure H(2)O, the oxygen content of SiO(x) film increases and the traps within SiO(x) are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10(-2) to 3x10(-8) A/cm(2) at an electric field of 3 MV/cm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.
Application of Supercritical CO2 Fluid for Dielectric Improvement of SiOx Film
(2009-01-01)
Tsai, Chih-Tsung
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Cheng, Yi-Li
;
Kin, Kon-Tsu
In this paper the supercritical carbon dioxide (SCCO2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (SiOx) film at 150 degrees C. After the treatment of SCCO2 fluid mixed with ethyl alcohol and pure H2O, the oxygen content of SiOx film increases and the traps within SiOx are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10(-2) to 3x10(-8) A/cm(2) at an electric field of 3 MV/cm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.
Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications
(2008-08-04)
Tsai, Chih-Tsung
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Cheng, Yi-Li
;
Huang, Fon-Shan
In this work, the supercritical CO(2) fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (SiO(x)) film at 150 degrees C. After the proposed treatment, the SiO(x) film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 10(2) times and the retention time attains to 2x10(3) s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps. (C) 2008 American Institute of Physics.
Passivation of defects in a-Si : H TFTs with 150 degrees C supercritical fluids
(2007)
Yang, Po-Yu
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Liu, Po-Tsun
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Chang, Ting-Chang
;
Cheng, Yi-Li
;
光電工程學系
In this study, the supercritical fluids act the transporter and deliver H2O molecule into the a-Si:H film for repairing defects. From experiment results, superior transfer characteristic is obtained after the treatment of supercritical fluids mixed with water and propyl-alcohol. Besides, density of states is also reduced significantly during this processing.