Browsing by Author "Cheng-Shih"

Now showing 1 - 4 of 4

Copper metalized ohmic contact electrode of compound device
(2008-05-06)
Lee
;
Cheng-Shih
;
Chang
;
Edward Yi
;
Chen
The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.
Cu-metalized compound semiconductor device
(2008-09-02)
Chang
;
Edward Yi
;
Chang
;
Shang-Wen
;
Lee
The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.
Interconnect of group III-V semiconductor device and fabrication method for making the same
(2010-12-07)
Lee
;
Cheng-Shih
;
Chang
;
Edward Yi
;
Chang
An interconnect of the group III-V semiconductor device and the fabrication method for making the same are described. The interconnect includes a first adhesion layer, a diffusion barrier layer for preventing the copper from diffusing, a second adhesion layer and a copper wire line. Because a stacked-layer structure of the first adhesion layer/diffusion barrier layer/second adhesion layer is located between the copper wire line and the group III-V semiconductor device, the adhesion between the diffusion barrier layer and other materials is improved. Therefore, the yield of the device is increased.
Schottky structure in GaAs semiconductor device
(2004-09-07)
Lee
;
Cheng-Shih
;
Chang
;
Yi
The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.