Browsing by Author "Chiang, Pei-Wei"

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A study of resistive switching effects on a thin FeO(x) transition layer produced at the oxide/iron interface of TiN/SiO(2)/Fe-contented electrode structures
(2010-02-01)
Feng, Li-Wei
;
Chang, Chun-Yen
;
Chang, Yao-Feng
;
Chen, Wei-Ren
;
Wang, Shin-Yuan
Large (>10(2)) and stable resistance switching characteristics were demonstrated in TiN/SiO(2)/Fe structure due to the presence of a thin FeO(x) transition layer at the SiO(2)/Fe interface, produced spontaneously during the plasma-enhanced tetraethyl orthosilicate oxide deposition process. Addition of Pt into Fe electrode, i.e., a TiN/SiO(2)/Fe(0.73)Pt(0.27) structure, was observed to improve the data dispersion of switching parameters, associating with the decrease in Fe content inside the FeO(x) layer. Additionally, current-voltage fitting data shows that current transport mechanism is governed by Ohm's law in low voltage region and Pool-Frenkel behavior in high voltage region, consisting with FeO(x) phase transition characteristics.
A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
(2010-02-01)
Feng, Li-Wei
;
Chang, Chun-Yen
;
Chang, Yao-Feng
;
Chen, Wei-Ren
;
Wang, Shin-Yuan
Large (>10(2)) and stable resistance switching characteristics were demonstrated in TiN/SiO2/Fe structure due to the presence of a thin FeOx transition layer at the SiO2/Fe interface, produced spontaneously during the plasma-enhanced tetraethyl orthosilicate oxide deposition process. Addition of Pt into Fe electrode, i.e., a TiN/SiO2/Fe0.73Pt0.27 structure, was observed to improve the data dispersion of switching parameters, associating with the decrease in Fe content inside the FeOx layer. Additionally, current-voltage fitting data shows that current transport mechanism is governed by Ohm's law in low voltage region and Pool-Frenkel behavior in high voltage region, consisting with FeOx phase transition characteristics.
Improvement of resistance switching characteristics in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/FePt structure by rapid annealing
(2010-05-31)
Feng, Li-Wei
;
Chang, Chun-Yen
;
Chang, Yao-Feng
;
Chang, Ting-Chang
;
Wang, Shin-Yuan
In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO(2)/FeO(x)/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO(2)/FeO(x)/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]
Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing
(2010-05-31)
Feng, Li-Wei
;
Chang, Chun-Yen
;
Chang, Yao-Feng
;
Chang, Ting-Chang
;
Wang, Shin-Yuan
In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]
Reproducible resistance switching of a relatively thin FeO(x) layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure
(2010-12-30)
Feng, Li-Wei
;
Chang, Yao-Feng
;
Chang, Chun-Yen
;
Chang, Ting-Chang
;
Wang, Shin-Yuan
In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeO(x) layer in the TiN/SiO(2)/FeO(x)/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeO(x) transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO(2)/FeO(x)/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. (C) 2010 Elsevier B.V. All rights reserved.
Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure
(2010-12-30)
Feng, Li-Wei
;
Chang, Yao-Feng
;
Chang, Chun-Yen
;
Chang, Ting-Chang
;
Wang, Shin-Yuan
In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeOx layer in the TiN/SiO2/FeOx/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeOx transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO2/FeOx/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. (C) 2010 Elsevier B.V. All rights reserved.