Browsing by Author "Chiang, T. H."

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Al(2)O(3)/Ga(2)O(3)(Gd(2)O(3)) passivation on In(0.20)Ga(0.80)As/GaAs-structural intactness with high-temperature annealing
(2010-04-07)
Lee, Y. J.
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Lee, C. H.
;
Tung, L. T.
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Chiang, T. H.
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Lai, T. Y.
Molecular beam epitaxy grown Al(2)O(3)/Ga(2)O(3)(Gd(2)O(3))/In(0.20)Ga(0.80)As/GaAs has been rapidly thermal annealed to 850 degrees C in N(2). The hetero-structure remained intact, with the In(0.20)Ga(0.80)As/GaAs interface being free of misfit dislocation and In(0.20)Ga(0.80)As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga(2)O(3)(Gd(2)O(3)) as a dielectric with an in situ Al(2)O(3) capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.
Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealing
(2010-04-07)
Lee, Y. J.
;
Lee, C. H.
;
Tung, L. T.
;
Chiang, T. H.
;
Lai, T. Y.
Molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs has been rapidly thermal annealed to 850 degrees C in N-2. The hetero-structure remained intact, with the In0.20Ga0.80As/GaAs interface being free of misfit dislocation and In0.20Ga0.80As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga2O3(Gd2O3) as a dielectric with an in situ Al2O3 capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.
Effect of void propagation on bump resistance due to electromigration in flip-chip solder joints using Kelvin structure
(2007-09-24)
Chang, Y. W.
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Chiang, T. H.
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Chen, Chih
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材料科學與工程學系
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Department of Materials Science and Engineering
Three-dimensional modeling is employed to simulate various Kelvin structures for detecting the change in bump resistance due to void formation and propagation during electromigration in flip-chip solder joints. It is found that the Kelvin structures can sense the highest voltage drop when its voltage probes are placed at the current entrance into the bump on the chip side, and it is thus the most sensitive design to monitor void formation and propagation. When the bump resistance increases 20% of its initial value, the depletion percentage of contact opening ranges from 21.0% to 65.0%, depending on the position of the probes. (c) 2007 American Institute of Physics.
Theoretical and experimental predictions of first-ply failure of a laminated composite elevated floor plate
(2010)
Chang, R. R.
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Chiang, T. H.
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機械工程學系
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Department of Mechanical Engineering
Experimental and theoretical approaches are studied via the first-ply failure strength on anti-symmetrically laminated composite elevated floor plates with various length-to-depth ratios, aspect ratios, and optimal fibre orientations subjected to central point loads. Optimal angle-ply orientations of anti-symmetric [theta/-theta ...](-S) laminated composite plates designed for maximum stiffness were investigated. A vacuum-assisted resin transfer moulding (VARTM) technique was used to manufacture an elevated floor plate by the stacking of pieces of glass-fibre fabrics in a vacuum pressure mould. In VARTM, resin is injected under pressure into a rigid mould filled with fibre preform and subsequent curing. The failure modes of the composite plates were studied, and the experimental results were used to verify the theoretical predictions. The first-ply failure loads of the composite plates are determined using the acoustic emission AMS3 system. The results have been proved to be efficient and effective in the theoretical and experimental analyses of first-ply failure loads of the composite plates.