Browsing by Author "Chiu, Chih-Hung"

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A Novel Si-based X'tal Oscillator Device Using 3D Integration Technologies
(2014-01-01)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiu, Chih-Hung
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Lo, Chung-Lun
;
Chen, Kuan-Neng
A novel Si-based X\'tal oscillator device (1.2 mm x 1.0 mm) is demonstrated by using 3D integration technologies. It is distinct from conventional X\'tal oscillator device with ceramics and metal lid. The novel Si-based X\'tal oscillator device shows no leakage path, and passes the hermetic encapsulation test and reliability investigation. In addition, the novel device shows the excellent electrical characteristics and provides the possibility to replace the conventional fabrication approach for the next generation products.
Advanced Crystal Component Package with Silicon TSV Interposer Using 3D Integration and Novel SU-8 Polymer Sealing Bonding Structure
(2014)
Shih, Jian-Yu
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Chen, Yen-Chi
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Lee, Shih-Wei
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Hu, Yu-Chen
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Chiu, Chih-Hung
In this paper, a novel crystal component package based on silicon TSV interposer substrate is demonstrated by using 3D integration technologies. It is distinct from conventional crystal component using ceramic-based substrate. This crystal component with advanced silicon-based substrate shows great manufacturability to replace traditional fabrication approach. In addition, the SU-8 sealing bonding structure provides the possibility to substitute for the conventional metal lid with reliability investigation. Finally, a novel silicon-based crystal component package with 3D integration is successfully fabricated through general semiconductor techniques to replace traditional manufacture.
Advanced TSV-Based Crystal Resonator Devices Using 3-D Integration Scheme With Hermetic Sealing
(2013-08-01)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiu, Chih-Hung
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Hu, Yu-Chen
;
Lo, Chung-Lun
An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.
Device Characteristics of TSV-Based Piezoelectric Resonator With Load Capacitance and Static Capacitance Modification
(2015-03-01)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiu, Chih-Hung
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Lo, Chung-Lun
;
Chang, Chi-Chung
The piezoelectric resonator device based on 3-D integration technologies and hermetic sealing bonding is presented with conventional semiconductor process. To pursue small form factor, high-performance, and cost-effective technologies, this through-silicon via (TSV)-based resonator is fabricated by CuSn eutectic bonding for hermeticity, wafer-level thinning, and Cu TSVs interconnection, while high-temperature cofired ceramic (HTCC) with metal lid is applied in the conventional resonator devices. The device characteristics and reliability of TSV-based resonator reveal it has great performance and outstanding quality. In addition, the device characteristics with load capacitance and its improvement through modification of the isolation in TSV-based substrate are discussed in this research. Demonstrations of these characteristics show that the TSV-based resonator possesses advantages and compatibility with current semiconductor process, as well as the manufacturability compared with the conventional metal lid with HTCC enclosures.
Motional Resistance Issue of TSV-Based Resonator Device and Its Improvement With a Concave Cu TSV Structural Design
(2014-08-01)
Shih, Jian-Yu
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Chen, Yen-Chi
;
Chiu, Chih-Hung
;
Chen, Kuan-Neng
;
交大名義發表
Motional resistance of TSV-based resonator devices with 3D integration techniques is investigated at the operating oscillating mode. Even with well-developed TSV and device fabrication, the motional resistance issue of the TSV-based resonator device is found due to the poor connected Ag paste. The corresponding solution is demonstrated by a modified concave Cu TSVs structure. This modified concave Cu TSV design shows the excellent device characteristics and no visible gaps between the Cu TSVs and resonator devices to insure a good electrical connection.
Non-doped solid-state white light-emitting electrochemical cells employing the microcavity effect
(2015-03-14)
Lin, Guan-Rung
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Chen, Hsiao-Fan
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Shih, Hsien-Chang
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Hsu, Jia-Hong
;
Chang, Yi
Solid-state white light-emitting electrochemical cells (LECs) have attracted research attention owing to their advantages of simple device structure, low operation voltage and compatibility with solution processes. In this work, we demonstrate a simple approach to obtain white electroluminescence (EL) from non-doped LECs based on a blue-emitting complex. With a relatively thicker emissive layer, red emission can be additionally enhanced by the microcavity effect when the recombination zone moves to appropriate positions. Hence, white EL can be harvested by combining blue emission from the complex and red emission from the microcavity effect. These non-doped white LECs show external quantum efficiencies and power efficiencies up to 5% and 12 lm W-1, respectively. These results show that efficient white EL can be obtained in simple non-doped LECs.
Quartz resonator assembling with TSV interposer using polymer sealing or metal bonding
(2014-10-01)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiu, Chih-Hung
;
Lo, Chung-Lun
;
Chang, Chi-Chung
This paper presents one wafer level packaging approach of quartz resonator based on through-silicon via (TSV) interposer with metal or polymer bonding sealing of frequency components. The proposed silicon-based package of quartz resonator adopts several three-dimensional (3D) core technologies, such as Cu TSVs, sealing bonding, and wafer thinning. It is different from conventional quartz resonator using ceramic-based package. With evaluation of mechanical structure design and package performances, this quartz resonator with advanced silicon-based package shows great manufacturability and excellent performance to replace traditional metal lid with ceramic-based interposer fabrication approach.
TSV-Based Quartz Crystal Resonator Using 3D Integration and Si Packaging Technologies
(2013)
Shih, Jian-Yu
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Chen, Yen-Chi
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Chiang, Cheng-Hao
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Chiu, Chih-Hung
;
Hu, Yu-Chen
In this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the electrical connection of the signal electrode on the quartz blank. The quartz blank is protected by the simultaneous formation of strength reinforcement and excellent sealing capacity of thin-film Cu/Sn eutectic bonding. With the well fabrication and the enhanced structure, excellent leakage results in the MIL-STD-883 hermetic test (8.5*10(-9) similar to 1*10(-8) Pa m(3)/sec by He leak detector) show the crystal resonator using 3D integration has the great performance and manufacturability to replace the conventional metal or ceramic enclosures for the next generation products.