Browsing by Author "Chiu, S. H."

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Effect of al trace dimension on electromigration failure time of flip-chip solder joints
(2006-09-01)
Chiu, S. H.
;
Chen, Chih
;
Yao, D. J.
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材料科學與工程學系
;
Department of Materials Science and Engineering
The effect of Al-trace dimension on electromigration of flip-chip solder joints was investigated. The Al trace dimension was found to have a significant influence on the electromigration failure time. When joints with Al traces 100 mu m wide were stressed by 1.0 A at 100 degrees C, failure times were 35 h, 1,700 h, and > 3,000 h for joints with Al traces that were 2,550 mu m, 1,700 mu m, and 850 mu m long, respectively. Solder joints with Al traces 40 mu m wide and 2,550 mu m long failed instantly at 0.6 A. The Joule heating effect was found to be responsible for the huge difference in failure time.
Effect of Al-trace degradation on Joule heating during electromigration in flip-chip solder joints
(2007-02-19)
Liang, S. W.
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Chiu, S. H.
;
Chen, Chih
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材料科學與工程學系
;
Department of Materials Science and Engineering
This study investigates the mechanism for the abrupt increase in temperature at later stages of electromigration in flip-chip solder joints. It is found that electromigration also occurs in Al traces when stressed by 0.6 A at 100 degrees C. Three-dimensional thermoelectrical simulation by finite element analysis was carried out to simulate the temperature distribution in solder joints with and without degradation of the Al trace. It is found that the degradation of the Al trace has substantial effect on the Joule heating of solder joints. This model can explain the serious Joule heating effect in the later stages of electromigration. (c) 2007 American Institute of Physics.
Effect of Si-die dimensions on electromigration failure time of flip-chip solder joints
(2011-05-16)
Chang, Y. W.
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Chiu, S. H.
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Chen, Chih
;
Yao, D. J.
;
材料科學與工程學系
Electromigration tests were performed for solder joints with various Si dies thickness and area. For the electro-migration in flip-chip solder joints with a 60, 100.250 and 760 mu m thick Si die, it is found that Si-die thickness has profound influence on electro-migration lifetime. The average failure time was 1608.0 h for joints with a 760-mu m-thick die when they are stressed by 1.0 A at 100 degrees C. However, it decreased significantly to 0.6 h for joints with a 60-mu m-thick die. According to the temperature measured by infrared microscopy, solder joints with a thinner die has a higher Joule heating effect, which results in a shorter electromigration lifetime. In addition, the die area has a considerable influence on the electromigration failure time. The electromigration failure time decreases as the die area decreases. The average failure time is 1608.0,28.0, 10.6,5.0 and 0.3 h for the solder joints with die area of 5350 x 4350 mu m(2), 5350 x 3600 mu m(2), 5350 x 3000 mu m(2), 5350 x 2000 mu m(2) and 5350 x 1000 mu m(2), respectively. The Joule heating effect becomes more serious in smaller dies, which causes a shorter electromigration lifetime. (C) 2011 Elsevier B.V. All rights reserved.
Effects of current crowding and Joule heating on reliability of solder joints
(2007)
Liang, S. W.
;
Chiu, S. H.
;
Chen, Chih
;
材料科學與工程學系
;
Department of Materials Science and Engineering
This study employs three-dimensional simulation to investigate the Joule heating effect under accelerated electromigration tests in flip-chip solder joints. It was found that the Joule heating effect was very seriously during high current stressing, and a hot spot exists in the solder bump. The hot-spot may play important role in the void formation and thermomigration in solder bumps during electromigration.
Excellent Color Rendering Index Quantum Dots White Light-Emitting Diode with Distributed Bragg Reflector Structure
(2014)
Chen, K. J.
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Lin, B. C.
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Han, H. V.
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Lin, C. C.
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Lee, C. Y.
This study demonstrated the high CRI and excellent uniformity colloidal quantum dot white-light-emitting diodes with the DBR structure at different correlated color temperature from 2500 K to 4500K.
Hybrid White Light-emitting Diodes by Organic-Inorganic materials
(2015)
Chen, K. J.
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Lai, Y. C.
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Lin, B. C.
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Lin, C. C.
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Chiu, S. H.
This study demonstrated the high uniformity hybrid white light-emitting didoes with polyfluoren (PFO) polymer and quantum dot (QD) with different CCT range from 3000K to 9000K.
Investigation of void nucleation and propagation during electromigration of flip-chip solder joints using x-ray microscopy
(2006-12-25)
Chiu, S. H.
;
Chen, Chih
;
材料科學與工程學系
;
Department of Materials Science and Engineering
X-ray microscopy was employed to investigate void nucleation and propagation during electromigration in solder joints. The shape of the voids at various stages can be clearly observed. The voids became irregular when they propagated to deplete the contact opening. Growth velocity at the early stage was found to be 1.3 mu m/h under 6.5x10(3) A/cm(2) at 150 degrees C, and it decreased to 0.3 mu m/h at later stages. Formation of intermetallic compound (IMC) and compositional changes at the interface of solder/IMC on the chip side were attributed to the retarded growth rate at later stages. (c) 2006 American Institute of Physics.
Investigation of Void Nucleation and Propagation in the Joule Heating Effect During Electromigration in Flip-Chip Solder Joints
(2010-11-01)
Chang, Y. W.
;
Chiu, S. H.
;
Chen, Chih
;
材料科學與工程學系
;
Department of Materials Science and Engineering
This study analyzes the effect of void propagation on the temperature increase of solder joints by using x-ray microscopy, Kelvin probes, and infrared microscopy. It was found that the temperature rise due to void formation was less than 1.3 degrees C when the voids depleted about 75% of the contact opening, even though bump resistance had increased to 10.40 times its initial value. However, the temperature rose abruptly with an increase of up to 8.0 degrees C when the voids depleted 96.2% of the contact opening. A hot spot was observed immediately before the occurrence of open failure in the solder bump. The local increase in temperature was about 30.2 degrees C at the spot. This spot may be the remaining contact area immediately before the occurrence of open failure.
Joule heating effect under accelerated electromigration in flip-chip solder joints
(2006)
Chiu, S. H.
;
Liang, S. W.
;
Chen, Chili
;
Yao, D. J.
;
材料科學與工程學系
This study employs three-dimensional simulation to investigate the Joule heating effect under accelerated electromigration tests in flip-chip solder joints. It was found that the Joule heating effect was very seriously during high current stressing, and a hot spot exists in the solder bump. The hot-spot may play important role in the void formation and thermomigration in solder bumps during electromigration.