Browsing by Author "Chou"

Now showing 1 - 5 of 5

Light-emitting diode of polymer nanocomposite with quantum dots
(2010-12-07)
Wei
;
Kung-Hwa
;
Chou
;
Chia-Hung
The present invention provides a light-emitting diode made of a polymer nanocomposite doped with quantum dots to improve luminescence efficiency and to increase stability and electrical characteristics.
Method for manufacturing a combined solid immersion lens (SIL) and submicron aperture, and device thereof
(2004-10-26)
Hsu
;
Wensyang
;
Chou
;
Hsueh Liang
;
Tien
The invention relates to an integrated method for manufacturing a combined solid immersion lens (SIL) and submicron aperture, and device thereof, comprising depositing a sacrificial layer on a substrate, coating a photoresist on the sacrificial layer and using photo-lithography to form an aperture on the photoresist, applying reflow and etching process to remove the sacrificial layer below the aperture, depositing a conductive material on the photoresist and performing electroplating to reduce the aperture size, then coating another photoresist and using photo-lithography to form a cylindrical phtoresist above the aperture, applying a high temperature thermal reflow to form a microlens, and finally removing the substrate to obtain an optical read/write apparatus with a combined solid immersion lens (SIL) and submicron aperture.
Process for manufacturing self-assembled nanoparticles
(2007-11-13)
Chen
;
Wei-Kuo
;
Lee
;
Ming-Chih
;
Chou
Process for fabricating self-assembled nanoparticles on buffer layers without mask making and allowing for any degree of lattice mismatch; that is, binary, ternary or quaternary nanoparticles comprising Groups III-V, II-VI or IV-VI. The process includes a first step of applying a buffer layer, a second step of turning on the purge gas to modulate the first reactant to the lower first flow rate, then the second reactant is supplied to the buffer layer to form a metal-rich island on the buffer layer, and a third step of turning on purge gas again to modulate the first reactant to the higher second flow rate onto the buffer layer. On the metal-rich island is formed the nanoparticles of the binary, ternary or quaternary III-V, II-VI and IV-IV semiconductor material. This is then recrystallized under the first reactant flow at high temperature forming high quality nanoparticles.
Vertical handover control algorithm for WLAN and UMTS
(2008-04-22)
Huang
;
Ching Yao
;
Chou
;
Chie Ming
In this invention, a novel vertical handover control algorithm, consisting of a throughput-based mapping function, QoS-based dynamic handover thresholds, and performance-based trigger timers, are proposed to resolve uncommon pilot problem, QoS requirements, and ping-pong effects, respectively. An analytic model based on a finite state machine is developed to evaluate the proposed algorithm in terms of the handover frequency and achievable throughput. A numerical analysis is also provided to further quantify the performance impacts.
Welding flux for use in arc-welding of stainless steels, method of welding stainless steel members using the welding flux
(2006-05-30)
Chou
;
Chang-Pin
;
Huang
;
Her-Yueh
;
Shyu
A welding flux for use in welding stainless steel parts to increase welding penetration, consisting essentially a base material obtained from manganese peroxide (MnO2), and an activator selected from a material group that includes zinc oxide (ZnO), silicon dioxide (SiO2), chromium oxide (CrO2), titanium dioxide (TiO2), molybdenum dioxide (MoO2), and iron oxide (Fe2O2).