Browsing by Author "Chou, Cheng-Wei"

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Carbon attachment on the aluminum nitride gate dielectric in the pentacene-based organic thin-film transistors
(2009-03-15)
Zan, Hsiao-Wen
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Chou, Cheng-Wei
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Wang, Chung-Hwa
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Song, Ho-Tsung
;
Hwang, Jenn-Chang
This study presents carbon attachment on an aluminum nitride (AlN) gate dielectric to improve the device performance of pentacene-based organic thin-film transistors (OTFTs). This approach produces high OTFT performance on an aged AlN surface. A high mobility of 0.67 cm(2)/V s was achieved on an AlN surface aged for 14 days, compared to a mobility of 0.05 cm(2)/V s on an as-deposited AlN surface. This improvement in device performance is correlated with carbon attachment on the AlN surface, which lowers surface energy. The lowered surface energy made the surface less polar, as measured by a contact angle instrument. The chemical composition of the aged AlN surface was analyzed using x-ray photoelectron spectroscopy before pentacene deposition. Enhanced C=C bonding at 284.5 eV was observed on the aged AlN surface. These enhanced C=C bonds favored the growth of large pentacene islands in the initial growth stage, which may improve OTFT device performance.
Design and Implementation of Chinese Dark Chess Programs
(2015-03-01)
Yen, Shi-Jim
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Chou, Cheng-Wei
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Chen, Jr-Chang
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Wu, I-Chen
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Kao, Kuo-Yuan
Chinese Dark Chess is an old and very popular game in the Chinese culture sphere. This game is a stochastic game with symmetric hidden information. This paper reviews alpha-beta search with chance nodes and proposes heuristics on Chinese Dark Chess programs. We propose an application of nondeterministic Monte Carlo Tree Search with random nodes for tackling partial observation. The proposed methods were implemented in the program Diablo, which won four Chinese Dark Chess tournaments in TAAI 2011/2012, TCGA 2011/2012 computer game tournaments. Diablo also played hundreds of games with different human players and programs based on alpha-beta search. These results show that the nondeterministic MCTS equipped with our heuristics is promising for Chinese Dark Chess.
Effect of Surface Energy on Pentacene Thin-Film Growth and Organic Thin Film Transistor Characteristics
(2009-03-01)
Zan, Hsiao-Wen
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Chou, Cheng-Wei
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光電工程學系
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顯示科技研究所
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Department of Photonics
in this study, we discuss pentacene-based organic thin films grown on a self-assembled monolayer (SAM)-treated dielectric with various functional groups and molecular lengths. The functional groups and molecular lengths on the dielectric surface were modified using a SAM treatment followed by ultra violet (UV) light exposure. Surface energy was used to observe the surface polarity variation during UV light exposure. After pentacene deposition, the growth modes of pentacene on surfaces with various surface characteristics were analyzed by atomic force microscope (AFM) and X-ray diffraction (XRD). The structure of pentacene growth on different surfaces with various surface characteristics was carefully examined. Organic thin film transistors fabricated with pentacene grown on various surfaces were characterized. When the polar components of surface energy were decreased, device mobility was increased from 0.04 to 0.21 cm(2) V(-1) s(-1) and the threshold voltage shifted from -13.55 to -3.2 V. (C) 2009 The Japan Society of Applied Physics
Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects
(2005)
Chou, Cheng-Wei
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Wu, Yung-Chun
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Wu, Yuan-Chun
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Chang, Ting-Chang
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Liu, Po-Tsun
A pattern-dependent metal-induced lateral crystallized (PDMILC) poly-Si thin film transistor was successfully demonstrated and characterized. The fabrication of new PDMILC is simple with only four-mask process. After NH3 plasma passivation, the device performance was enhanced, including the high on/off current ration (>10(6)), the high mobilit (31.19 cm(2)/Vs), and the steep subtreshold swing (0.483 V/dec). The performance of PDMLC TFT with NH3 plasma passivation is superior to that of the counterpart without NH3 plasma passivation. The NH3 plasma treatment can result in the effective hydrogen passivation of the grain-boundary dangling bonds, and the nitrogen piile-up at SiO2/poly-Si interface.
Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors
(2010)
Zan, Hsiao-Wen
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Chen, Wei-Tsung
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Chou, Cheng-Wei
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Tsai, Chuang-Chuang
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Huang, Ching-Neng
Instead of the conventional furnace annealing process with a temperature higher than 300 degrees C, two low temperature annealing methods are successfully demonstrated to suppress the instability problem of amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs). With adequate Nd:yttrium aluminum garnet laser (266 nm) annealing energy density or Xe excimer UV lamp (172 nm) irradiation time, the on voltage shift is greatly suppressed from over 10 to 0.1 V. The influence of laser energy density and UV lamp irradiation time on the performance of IGZO TFTs is also investigated and explained. The proposed methods are promising for the development of amorphous IGZO TFTs on flexible substrates.
Methane Exposure on the Aluminum Nitride Gate Dielectric in Pentacene-Based Organic Thin-Film Transistors
(2009)
Chou, Cheng-Wei
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Zan, Hsiao-Wen
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Wang, Chung-Hwa
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Chen, Wei-Tsung
;
Tsai, Li-Shiuan
The device performance of a pentacene-based organic thin-film transistor (OTFT) fabricated on an aluminum nitride (AlN) surface can be improved by exposing AlN to a methane (CH(4)) gas before device fabrication. The mobility of the OTFT was enhanced from 0.046 to 0.924 cm(2)/V s by exposing AlN to CH(4). Its threshold voltage was reduced from -4.5 to -1.9 V. After the CH(4) exposure, the reduced surface energy of AlN was correlated with the improvement of the OTFT performance. The reduction of surface energy was correlated with the replacement of O-C=O bonds by C-O bonds and hydrocarbon (CH(x)) on the AlN surface. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3182823] All rights reserved.
Pentacene patterning on aluminum nitride by water dipping
(2008)
Zan, Hsiao-Wen
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Chou, Cheng-Wei
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Wang, Chung-Hwa
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Yen, Kuo-Hsi
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Hwang, Jenn-Chang
This study reports a pentacene patterning method that can be combined with conventional lithography to pattern pentacene film. The aluminum nitride (AlN) surface was patterned using a conventional photolithography process and then treated with oxygen (O(2)) plasma on uncovered AlN to modify surface polarity. Following pentacene deposition, the sample was dipped in water to remove pentacene from the O(2) plasma-treated area. The O(2) plasma-treated AlN surface was analyzed using X-ray photoelectron spectroscopy (XPS) before pentacene deposition. The polar surface energy changed from 13.2 to 114.4 mJ/m(2) when the AlN surface was treated with O(2) plasma at 100 W for 10 min. The polar surface energy was attributed to the increase of Al-O bonds on the surface based on XPS measurements. The intrusion energy of water was enhanced from 34.5 to 140.4 mJ/m(2) due to the polar surface energy induced by the O(2) plasma treatment. The enhancement of water intrusion energy and the polar surface energy explains the water-removable pentacene patterning mechanism. (C) 2008 The Electrochemical Society.
Surface energy and adhesion energy of solution-based patterning in organic thin film transistors
(2008-02-29)
Zan, Hsiao Wen
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Chou, Cheng-Wei
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Yen, Kuo-Hsi
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光電工程學系
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顯示科技研究所
This study elucidates the patterning of pentacene by adjusting its surface energy. The surface energy was modified by self-assembled monolayer treatment and exposure to ultra-violet (UV) light through a quartz-glass mask. Then, following pentacene deposition, dipping in water was used to remove pentacene from the UV-exposed area. The adhesion energy and the intrusion energy were analyzed to determine the mechanism of this patterning process. The variation of the intrusion energy with the surface energy was found to be the main issue in pentacene patterning. The characteristics of pentacene-organic thin film transistors were also measured to confirm the proposed method. (C) 2007 Elsevier B.V. All rights reserved.
TAAI 2011 COMPUTER-GO TOURNAMENTS
(2011-12-01)
Chou, Cheng-Wei
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Yen, Shi-Jim
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Wu, I-Chen
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資訊工程學系
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Department of Computer Science
THE 2010 TAAI COMPUTER-GO TOURNAMENTS
(2011-03-01)
Yen, Shi-Jim
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Chou, Cheng-Wei
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Lin, Hung-Hsuan
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Wu, I-Chen
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資訊工程學系