Browsing by Author "Chou, K. Y."

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Energy Based Swing-up Controller Design using Phase Plane Method For Rotary Inverted Pendulum
(2014)
Chou, K. Y.
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Chen, Y. P.
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電控工程研究所
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Institute of Electrical and Control Engineering
This study proposes a novel swing-up control strategy for the rotary inverted pendulum based on the feedback linearization and energy control method. After feedback linearization, an energy function is selected to design the swing-up control law where a gain k is chosen according to the trajectories in the phase-plane. It can be found that the time needed for the energy converging to zero is related to the gain k and the use of a larger k comes to a fast energy convergence rate. The comparative analysis and advantages of the proposed swingup control law are included and demonstrated by numerical simulation.
Size-Dependent Trapping Effect in Nano-Dot Non-Volatile Memory
(2011)
Tsai, C. Y.
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Cheng, C. H.
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Chang, T. Y.
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Chou, K. Y.
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Chin, Albert
We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As+ implantation to improve the device performance of MONOS CTF device. The TaN-[SiO2-LaAlO3]-[As+-implanted ZrON]-[LaAlO3-SiO2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85 degrees C, and an endurance window of 5.1 V after 10(5) cycles under fast 100 mu s and low +/- 16 V program/erase. The performance of As+-implanted ZrON is significantly better than that of stacked Si3N4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.
Very High Performance Non-Volatile Memory on Flexible Plastic Substrate
(2010)
Cheng, C. H.
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Chou, K. Y.
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Chin, Albert
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Yeh, F. S.
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電子工程學系及電子研究所
We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 mu W switching power (1.6 mu A at 3 V; -0.5 nA at -2 V), excellent 10(5) cycling endurance, large on/off retention memory window > 10(2) even at 85 degrees C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.