Very High Performance Non-Volatile Memory on Flexible Plastic Substrate

Abstract

We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 mu W switching power (1.6 mu A at 3 V; -0.5 nA at -2 V), excellent 10(5) cycling endurance, large on/off retention memory window > 10(2) even at 85 degrees C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.