Browsing by Author "Chou, Sam"

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Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs
(2011-03-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Chen, Bo-Yuan
;
Huang, Guo-Wei
For the first time, the high-frequency noise behavior of tensile-strained n-channel metal-oxide-semiconductor field-effect transistors, including their temperature dependency, is experimentally examined. Our experimental results show that with similar saturation voltages, the strained device is found to have larger channel noise than the control device at the same bias point. For given direct-current power consumption, however, due to enhanced transconductance, the strained device has better small-signal behaviors (higher f(t) and f(max)) and noise characteristics (smaller NF(min) and R(n)) than the control device.
Power Improvement for 65nm nMOSFET with High-Tensile CESL and Fast Nonlinear Behavior Modeling
(2010)
Chiu, Chia-Sung
;
Chen, Kun-Ming
;
Huang, Guo-Wei
;
Lin, Shu-Yu
;
Chen, Bo-Yuan
In this paper, the power gain improvements by stress contact etch stop layer (CESL) in a 65-nm nMOSFET were studied. Compared to the conventional nMOSFET, the device with CESL stress shows an extra 6% power gain enhancement for the increased stress in the channel region. This study also presents the polyharmonic distortion (PHD) model extraction by X-parameters measurement when the power transistor was designed to work far from 50 ohms. By mean of this model, the accurate nonlinear behaviors of nMOSFET were obtained rapidly.