Browsing by Author "Chou, Yi-Hsuan"

Now showing 1 - 2 of 2

Growth of ternary WCxNy thin films from a single-source precursor, W((NBu)-Bu-t)(2)(NEt2)(2)
(2006-12-01)
Chuang, Shiow-Huey
;
Chiu, Hsin-Tien
;
Chou, Yi-Hsuan
;
Chen, Shiou-Fan
;
應用化學系
An organoimido complex of tungsten, bis(tertbutylimido)bis(diethylamido)tungsten, W((NBu)-Bu-t)(2)(NEt2)(2), is used as a single source precursor to deposit thin films of cubic phase tungsten carbonitride, WCxNy (x: 0.21-0.38, y: 0.62-0.76), by metal-organic chemical vapor deposition on silicon substrates. In general, the N/W and C/W ratios decreased from 0.76 to 0.62 and 0.38 to 0.21, respectively with increasing the temperature of deposition from 500 to 650 degrees C. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon and nitrogen atoms were incorporated through the activation of the ligands.
Intriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)(2)](4)
(2006-12-18)
Chou, Yi-Hsuan
;
Chiu, Hsin-Tien
;
Kuo, Teng-Fang
;
Chi, Cheng-Chung
;
Chuang, Shiow-Huey
Hafnium nitride films were prepared on the Si(100) substrates by the metal-organic chemical vapor deposition method using Hf[N(C2H5)(2)](4). The prepared samples were then oxidized in air, followed by rapid-thermal annealing to produce HfOxNy thin films, meanwhile the associated physical properties were investigated. The x-ray photoelectron spectroscope analysis unveiled that the composition of the films is HfOxNy. In addition, the films after the rapid-thermal annealing treatments at various temperatures revealed salient features in their physical properties, such as capacitance and conductivity. On this basis, the feasibility of using the HfOxNy layers as high-k dielectrics in complementary metal oxide semiconductor transistors was also discussed. (c) 2006 American Institute of Physics.