Growth of ternary WCxNy thin films from a single-source precursor, W((NBu)-Bu-t)(2)(NEt2)(2)

Abstract

An organoimido complex of tungsten, bis(tertbutylimido)bis(diethylamido)tungsten, W((NBu)-Bu-t)(2)(NEt2)(2), is used as a single source precursor to deposit thin films of cubic phase tungsten carbonitride, WCxNy (x: 0.21-0.38, y: 0.62-0.76), by metal-organic chemical vapor deposition on silicon substrates. In general, the N/W and C/W ratios decreased from 0.76 to 0.62 and 0.38 to 0.21, respectively with increasing the temperature of deposition from 500 to 650 degrees C. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon and nitrogen atoms were incorporated through the activation of the ligands.