Browsing by Author "Chuang, Shiow-Huey"

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Fabrication and Characterization of High-k Dielectric Nickel Titanate Thin Films Using a Modified Sol-Gel Method
(2011-01-01)
Chuang, Shiow-Huey
;
Hsieh, Min-Lung
;
Wu, Shih-Chieh
;
Lin, Hong-Cai
;
Chao, Tien-Sheng
This research produced high-quality, single-phase nickel titanate (NiTiO(3)) thin films, a high-k material for gate dielectrics, by a modified sol-gel method. The precursor was prepared by reactions of nickel acetate tetrahydrate and titanium isopropoxide in 2-methoxyethanol with a 1:1 ratio of Ni/Ti in the solution. After coating, the films were post-heat treated between 500 degrees and 900 degrees C. X-ray diffraction indicated that the films deposited at and above 600 degrees C were single-phase nickel titanate. X-ray photoelectron spectra of a typical thin film revealed that the binding energies of Ni 2p(3/2) and Ti 2p(3/2) electrons were 855.2 and 457.7 eV, respectively. Raman spectra showed eight absorptions between 200 and 800 cm-1. Scanning electron microscope images showed smooth surfaces. Findings showed the dielectric constant of the NiTiO(3) film to be 41.36 by capacitance-voltage analysis. The results show that single-phase NiTiO(3) film can be prepared by the sol-gel spin coating method and then heat-treated at 600 degrees C.
Formation and Structural Characterization of Cobalt Titanate Thin Films
(2010-10-01)
Chuang, Shiow-Huey
;
Gao, Reui-Hong
;
Gao, Kuo-Hsing
;
Chiang, Michael Y.
;
Chao, Tien-Sheng
This research successfully produces high quality cobalt titanate (CoTiO(3)) thin films, a high-k material for gate dielectrics, on SiO(2)/Si(100) substrates via a spin-coating method with a sol-like precursor solution. This study prepares the precursor solution by reactions of cobalt acetate and titanium isopropoxide in 2-methoxyethanol. The current work obtains CoTiO(3) thin films after spin coating followed by post-treatment with air under 550 similar to 650 degrees C. A scanning electron microscope, determines film thickness and morphology and X-ray diffraction identifies material structures. This study uses X-ray photoelectron spectroscopy to analyze both elemental compositions and chemical bonding characters of the thin films. This work also investigates reaction pathways.
Growth of ternary WCxNy thin films from a single-source precursor, W((NBu)-Bu-t)(2)(NEt2)(2)
(2006-12-01)
Chuang, Shiow-Huey
;
Chiu, Hsin-Tien
;
Chou, Yi-Hsuan
;
Chen, Shiou-Fan
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應用化學系
An organoimido complex of tungsten, bis(tertbutylimido)bis(diethylamido)tungsten, W((NBu)-Bu-t)(2)(NEt2)(2), is used as a single source precursor to deposit thin films of cubic phase tungsten carbonitride, WCxNy (x: 0.21-0.38, y: 0.62-0.76), by metal-organic chemical vapor deposition on silicon substrates. In general, the N/W and C/W ratios decreased from 0.76 to 0.62 and 0.38 to 0.21, respectively with increasing the temperature of deposition from 500 to 650 degrees C. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon and nitrogen atoms were incorporated through the activation of the ligands.
Intriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)(2)](4)
(2006-12-18)
Chou, Yi-Hsuan
;
Chiu, Hsin-Tien
;
Kuo, Teng-Fang
;
Chi, Cheng-Chung
;
Chuang, Shiow-Huey
Hafnium nitride films were prepared on the Si(100) substrates by the metal-organic chemical vapor deposition method using Hf[N(C2H5)(2)](4). The prepared samples were then oxidized in air, followed by rapid-thermal annealing to produce HfOxNy thin films, meanwhile the associated physical properties were investigated. The x-ray photoelectron spectroscope analysis unveiled that the composition of the films is HfOxNy. In addition, the films after the rapid-thermal annealing treatments at various temperatures revealed salient features in their physical properties, such as capacitance and conductivity. On this basis, the feasibility of using the HfOxNy layers as high-k dielectrics in complementary metal oxide semiconductor transistors was also discussed. (c) 2006 American Institute of Physics.
Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation
(2012-12-01)
Wu, Shih-Chieh
;
Hou, Tuo-Hung
;
Chuang, Shiow-Huey
;
Chou, Hsin-Chih
;
Chao, Tien-Sheng
This study demonstrates polycrystalline silicon thin-film transistors (poly-Si TFTs) integrated with a high-kappa nickel-titanium oxide (NiTiO3) gate dielectric using sol-gel spin-coating and nitrogen channel implantation. This novel fabrication method of the high-kappa NiTiO3 gate dielectric offers thin equivalent-oxide thickness and high gate capacitance density, favorable for increasing the current driving capability. Introducing nitrogen ions into the poly-Si using implantation effectively passivates the trap states not only in the poly-Si channel but also at the gate dielectric/poly-Si interface. The poly-Si NiTiO3 TFTs with nitrogen implantation exhibit significantly improved electrical characteristics, including lower threshold voltage, a steeper subthreshold swing, higher field-effect mobility, a larger on/off current ratio, and less threshold-voltage roll-off. Furthermore, the nitrogen implantation improves the reliability of poly-Si NiTiO3 TFTs against hot-carrier stress and positive bias temperature instability. (C) 2012 Elsevier Ltd. All rights reserved.
X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO(3) high-k dielectric prepared by sol-gel spin coating method
(2008-09-01)
Kao, Kuo-Hsing
;
Chuang, Shiow-Huey
;
Wu, Woei-Cherng
;
Chao, Tien-Sheng
;
Chen, Jian-Hao
The characteristics of CoTiO(3) high-k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k similar to 40.2) of CoTiO(3) dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO(2) and spin-on CoTiO(3) was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO(2) and spin-on CoTiO(3) were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO(3) directly with SiO(2) and indirectly with Si was determined in this work. (c) 2008 American Institute of Physics.
X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high-k dielectric prepared by sol-gel spin coating method
(2008-09-01)
Kao, Kuo-Hsing
;
Chuang, Shiow-Huey
;
Wu, Woei-Cherng
;
Chao, Tien-Sheng
;
Chen, Jian-Hao
The characteristics of CoTiO3 high-k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k similar to 40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO2 and spin-on CoTiO3 was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO2 and spin-on CoTiO3 were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO3 directly with SiO2 and indirectly with Si was determined in this work. (c) 2008 American Institute of Physics.