Browsing by Author "Chung"

Now showing 1 - 4 of 4

Digital loop filter for all-digital phase-locked loop design
(2010-04-13)
Lee
;
Chen-yi
;
Chung
;
Ching-che
A digital loop filter installed in an all-digital phase-locked loop (PLL) receives a digitally controlled oscillator (DCO) control code transmitted from a PLL controller in the all-digital PLL, and calculate an average value, such that the PLL controller can produce another DCO control code by the average value for controlling and adjusting an output signal of a digitally controlled oscillator (DCO) in the neighborhood of the average value to maintain compensating a phase/frequency difference with an input signal, so as to minimize the jitter effect of the input signal on the all-digital PLL, reduce the jitter effect of the output signal, and keep tracking and locking the frequency and the phase of the input signal.
Dual bandpass filter having serial configuration of coupled-line filters
(2009-03-31)
Chung
;
Shyh-Jong
;
Lin
;
Ke-Chiang
;
Chang
Two second-order bandpass filter are connected serially to obtain a dual bandpass filter. One is inductive and the other is capacitive. One has a low passband and the other has a high passband. Between them, a finite transmission zero is formed to suppress noise. The present invention achieves a passband as wide as 1 gigahertz so that it can be applied to a wireless local network, communication equipments and electronic devices.
Manufacturing method of thin film transistor
(2006-01-31)
Chang
;
Kow Ming
;
Chung
;
Yuan Hung
A method of manufacturing a thin film transistor for solving the drawbacks of the prior arts is disclosed. The method includes steps of providing an insulating substrate, sequentially forming a source/drain layer, a primary gate insulating layer, and a first conducting layer on the insulating substrate, etching the first conducting layer to form a primary gate; sequentially forming a secondary gate insulating layer and a second conducting layer on the primary gate; and etching the second conducting layer to form a first secondary gate and a second secondary gate.
Structure of thin film transistor
(2005-11-29)
Chang
;
Kow Ming
;
Chung
;
Yuan Hung
A method of manufacturing a thin film transistor for solving the drawbacks of the prior art is disclosed. The method includes steps of providing an insulating substrate, sequentially forming a source/drain layer, a primary gate insulating layer, and a first conducting layer on the insulating substrate, etching the first conducting layer to form a primary gate; sequentially forming a secondary gate insulating layer and a second conducting layer on the primary gate; and etching the second conducting layer to form a first secondary gate and a second secondary gate.