Browsing by Author "Fang, Xiang"

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A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio
(2016-04)
Fang, Xiang
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Lin, Chia-Ho
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Sun, Yung-Tai
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Chin, Huei-Tzu
;
Zan, Hsiao-Wen
A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 x 10(-5) mA/cm(2) and high ON/OFF current ratio as high as 10(5). (C) 2016 Elsevier B.V. All rights reserved.
Sub-100 nm ALD-assisted nanoimprint lithography for realizing vertical organic transistors with high ON/OFF ratio and high output current
(2014-12-01)
Hsu, Yung
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Fang, Xiang
;
Wang, Lon A.
;
Zan, Hsiao-Wen
;
Meng, Hsin-Fei
We introduced a conformal atomic-layer-deposited aluminum oxide layer to cover the imprint mold to reduce the feature size and to strengthen the mold durability. A nano-hole array pattern with diameter down to 85 nm was successfully transferred to sample substrate to fabricate a vertical organic transistor. The Imprint vertical organic transistor exhibited high output current density as 4.35 cm(2)/V s and high ON/OFF current ratio as 11,000 at a low operation voltage as 1.5 V. (C) 2014 Elsevier B.V. All rights reserved.