A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 x 10(-5) mA/cm(2) and high ON/OFF current ratio as high as 10(5). (C) 2016 Elsevier B.V. All rights reserved.