標題: | A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio |
作者: | Fang, Xiang Lin, Chia-Ho Sun, Yung-Tai Chin, Huei-Tzu Zan, Hsiao-Wen Meng, Hsin-Fei Horng, Sheng-Fu Wang, Lon A. 物理研究所 光電工程學系 Institute of Physics Department of Photonics |
關鍵字: | Nanoimprint lithography;Vertical;Organic transistor;P3HT;Lift-off |
公開日期: | 四月-2016 |
摘要: | A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 x 10(-5) mA/cm(2) and high ON/OFF current ratio as high as 10(5). (C) 2016 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.orgel.2016.01.027 http://hdl.handle.net/11536/133460 |
ISSN: | 1566-1199 |
DOI: | 10.1016/j.orgel.2016.01.027 |
期刊: | ORGANIC ELECTRONICS |
Volume: | 31 |
起始頁: | 227 |
結束頁: | 233 |
顯示於類別: | 期刊論文 |