標題: A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio
作者: Fang, Xiang
Lin, Chia-Ho
Sun, Yung-Tai
Chin, Huei-Tzu
Zan, Hsiao-Wen
Meng, Hsin-Fei
Horng, Sheng-Fu
Wang, Lon A.
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
關鍵字: Nanoimprint lithography;Vertical;Organic transistor;P3HT;Lift-off
公開日期: 四月-2016
摘要: A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 x 10(-5) mA/cm(2) and high ON/OFF current ratio as high as 10(5). (C) 2016 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2016.01.027
http://hdl.handle.net/11536/133460
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2016.01.027
期刊: ORGANIC ELECTRONICS
Volume: 31
起始頁: 227
結束頁: 233
顯示於類別:期刊論文