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dc.contributor.authorFang, Xiangen_US
dc.contributor.authorLin, Chia-Hoen_US
dc.contributor.authorSun, Yung-Taien_US
dc.contributor.authorChin, Huei-Tzuen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.contributor.authorWang, Lon A.en_US
dc.date.accessioned2017-04-21T06:56:50Z-
dc.date.available2017-04-21T06:56:50Z-
dc.date.issued2016-04en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2016.01.027en_US
dc.identifier.urihttp://hdl.handle.net/11536/133460-
dc.description.abstractA solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 x 10(-5) mA/cm(2) and high ON/OFF current ratio as high as 10(5). (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNanoimprint lithographyen_US
dc.subjectVerticalen_US
dc.subjectOrganic transistoren_US
dc.subjectP3HTen_US
dc.subjectLift-offen_US
dc.titleA solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratioen_US
dc.identifier.doi10.1016/j.orgel.2016.01.027en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume31en_US
dc.citation.spage227en_US
dc.citation.epage233en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000371802000029en_US
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