A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

doi:10.1016/j.orgel.2016.01.027

标题:	A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio
作者:	Fang, Xiang Lin, Chia-Ho Sun, Yung-Tai Chin, Huei-Tzu Zan, Hsiao-Wen Meng, Hsin-Fei Horng, Sheng-Fu Wang, Lon A. 物理研究所光电工程学系 Institute of Physics Department of Photonics
关键字:	Nanoimprint lithography;Vertical;Organic transistor;P3HT;Lift-off
公开日期:	四月-2016
摘要:	A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 x 10(-5) mA/cm(2) and high ON/OFF current ratio as high as 10(5). (C) 2016 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.orgel.2016.01.027 http://hdl.handle.net/11536/133460
ISSN:	1566-1199
DOI:	10.1016/j.orgel.2016.01.027
期刊:	ORGANIC ELECTRONICS
Volume:	31
起始页:	227
结束页:	233
显示于类别：	Articles