A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio
| dc.citation.epage | 233 | en_US |
| dc.citation.spage | 227 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.contributor.author | Fang, Xiang | en_US |
| dc.contributor.author | Lin, Chia-Ho | en_US |
| dc.contributor.author | Sun, Yung-Tai | en_US |
| dc.contributor.author | Chin, Huei-Tzu | en_US |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Meng, Hsin-Fei | en_US |
| dc.contributor.author | Horng, Sheng-Fu | en_US |
| dc.contributor.author | Wang, Lon A. | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2017-04-21T06:56:50Z | |
| dc.date.available | 2017-04-21T06:56:50Z | |
| dc.date.issued | 2016-04 | en_US |
| dc.description.abstract | A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 x 10(-5) mA/cm(2) and high ON/OFF current ratio as high as 10(5). (C) 2016 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.orgel.2016.01.027 | en_US |
| dc.identifier.issn | 1566-1199 | en_US |
| dc.identifier.journal | ORGANIC ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.orgel.2016.01.027 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/133460 | |
| dc.identifier.wosnumber | WOS:000371802000029 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Nanoimprint lithography | en_US |
| dc.subject | Vertical | en_US |
| dc.subject | Organic transistor | en_US |
| dc.subject | P3HT | en_US |
| dc.subject | Lift-off | en_US |
| dc.title | A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio | en_US |
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