Browsing by Author "Feng, Hsien-Tsung"

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Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs
(2013-10-01)
Wu, Shih-Chieh
;
Feng, Hsien-Tsung
;
Yu, Ming-Jiue
;
Wang, I-Ting
;
Hou, Tuo-Hung
This letter proposes a novel high bit density nonvolatile memory using a logic compatible flexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) structure fabricated at low temperature. Before electrical forming, the a-IGZO TFT exhibits excellent transistor performance, including an ON/OFF current ratio of 8.8 x 10(6), a steep subthreshold slope of 0.14 V/decade, a threshold voltage of 0.55 V, and a maximum field-effect mobility of 2 cm(2)/Vs. After electrical forming, a three-bit-per-cell resistive switching memory is realized using localized multilevel resistance states at the drain and source bits. Combining dual functionalities to achieve low-cost integration and excellent device characteristics at bending states, the proposed device is promising for future system-on-plastic applications.
Multi-Bit-per-Cell a-IGZO TFT Resistive-Switching Memory for System-on-Plastic Applications
(2012)
Wu, Shih-Chieh
;
Feng, Hsien-Tsung
;
Yu, Ming-Jiue
;
Wang, I-Ting
;
Hou, Tuo-Hung
We reported a novel flexible nonvolatile memory using complete logic-compatible a-IGZO TFTs fabricated at room temperature. The memory device utilized localized and independent resistive switching for high-density two-bit-per-cell and multi-bit-per-cell operations. Combining low-temperature fabrication, low-cost integration, high bit-density, and excellent flexible memory characteristics, this device shows promise for future system-on-plastic applications.
RRAM SET Speed-Disturb Dilemma and Rapid Statistical Prediction Methodology
(2012)
Luo, Wun-Cheng
;
Liu, Jen-Chieh
;
Feng, Hsien-Tsung
;
Lin, Yen-Chuan
;
Huang, Jiun-Jia
This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.