RRAM SET Speed-Disturb Dilemma and Rapid Statistical Prediction Methodology

Abstract

This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.