RRAM SET Speed-Disturb Dilemma and Rapid Statistical Prediction Methodology

dc.contributor.author	Luo, Wun-Cheng	en_US
dc.contributor.author	Liu, Jen-Chieh	en_US
dc.contributor.author	Feng, Hsien-Tsung	en_US
dc.contributor.author	Lin, Yen-Chuan	en_US
dc.contributor.author	Huang, Jiun-Jia	en_US
dc.contributor.author	Lin, Kuan-Liang	en_US
dc.contributor.author	Hou, Tuo-Hung	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:30:46Z
dc.date.available	2014-12-08T15:30:46Z
dc.date.issued	2012	en_US
dc.description.abstract	This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.	en_US
dc.identifier.isbn	978-1-4673-4870-6	en_US
dc.identifier.journal	2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/21985
dc.identifier.wosnumber	WOS:000320615600055
dc.language.iso	en_US	en_US
dc.title	RRAM SET Speed-Disturb Dilemma and Rapid Statistical Prediction Methodology	en_US
dc.type	Proceedings Paper	en_US

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