Browsing by Author "Feng, M"

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10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023
(2005)
Liao, YS
;
Lin, GR
;
Lin, CK
;
Chu, YS
;
Kuo, HC
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PIND with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4 x 10(-15) W/Hz(1/2), and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.
Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs
(2006-06-12)
Liao, YS
;
Shi, JW
;
Wu, YS
;
Kuo, HC
;
Feng, M
We demonstrate the optical heterodyne diagnostics and high saturation power characteristics of a novel undoped InP sandwiched In0.53Ga0.47As p-i-n photodiode with a partially p-doped photoabsorption layer, which is grown on a linearly graded metamorphic InxGa1-xP buffered GaAs substrate layer and exhibits an excellent low dark current density of 3.6 x 10(-7) A/cm(2). Such a top-illuminated optical receiver exhibits an illuminating window of 60-mu m diameter, which performs ultra-linear power handling capability up to 18 dBm at 1550 nm, providing a maximum photocurrent of 35 mA under a reverse bias of 9 volts. These result in extremely high current bandwidth and bandwidth-responsivity products of 350 mA center dot GHz and 4.8 GHz center dot A/W, respectively, at receiving frequency of up to 10 GHz. (c) 2006 Optical Society of America.
Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
(2005-06-01)
Lin, GR
;
Kuo, HC
;
Lin, CK
;
Feng, M
;
光電工程學系
A novel top-illuminated In-0.53 Ga-0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4 x 10(-15) W/Hz(1/2), and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.