Browsing by Author "Fowler, Burt"

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A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector
(2017-01-01)
Lin, Chih-Yang
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Chen, Ying-Chen
;
Gu, Meiqi
;
Pan, Chih-Hung
;
Jin, Fu-Yuan
For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling ("seasoning effect"). Compatible current density (10(7)similar to 10(9) A/cm(2)) and selectivity (similar to 100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications.
Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory
(2013)
Chang, Yao-Feng
;
Chen, Ying-Chen
;
Li, Ji
;
Xue, Fei
;
Wang, Yanzhen
Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
(2014-02-01)
Ji, Li
;
Chang, Yao-Feng
;
Fowler, Burt
;
Chen, Ying-Chen
;
Tsai, Tsung-Ming
We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.
Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere Lithography
(2014)
Ji, Li
;
Chang, Yao-Feng
;
Fowler, Burt
;
Chen, Ying-Chen
;
Tsai, Tsung-Ming
The Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memory
(2014)
Chang, Yao-Feng
;
Fowler, Burt
;
Chen, Ying-Chen
;
Ji, Li
;
Zhou, Fei