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Browsing by Author "Funamiz, K."

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    Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
    (2009)
    Funamiz, K.
    ;
    Lin, Y. C.
    ;
    Kakushima, K.
    ;
    Ahmet, P.
    ;
    Tsutsui, K.
    InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.