Browsing by Author "Galitsyn, Yu G."

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Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy
(2017-01-01)
Zhuravlev, K. S.
;
Gulyaev, D. V.
;
Aleksandrov, I. A.
;
Malin, T. V.
;
Mansurov, V. G.
We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 10(7)-10(9) cm(-2). Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.