Browsing by Author "HOU, CS"

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A 2-D ANALYTIC MODEL FOR THE THRESHOLD-VOLTAGE OF FULLY DEPLETED SHORT GATE-LENGTH SI-SOI MESFETS
(1995-12-01)
HOU, CS
;
WU, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A two zone Green's function solution method is proposed to analytically model the potential distribution in the silicon film of fully depleted SOI MESFET's, in which the exact solution of 2-D Poisson's equation is obtained by using the appropriate boundary conditions, From the derived analytic 2-D potential distribution, the bottom potential in the active silicon film is used to analyze the drain-induced barrier lowering effect and the threshold voltage is defined in terms of minimum channel potential barrier, The results of the developed analytic threshold-voltage model are compared with those of 2-D numerical simulation, and good agreements are obtained for the gate length down to 0.1 mu m with wide ranges of structure parameters and bias conditions.