A 2-D ANALYTIC MODEL FOR THE THRESHOLD-VOLTAGE OF FULLY DEPLETED SHORT GATE-LENGTH SI-SOI MESFETS

Abstract

A two zone Green's function solution method is proposed to analytically model the potential distribution in the silicon film of fully depleted SOI MESFET's, in which the exact solution of 2-D Poisson's equation is obtained by using the appropriate boundary conditions, From the derived analytic 2-D potential distribution, the bottom potential in the active silicon film is used to analyze the drain-induced barrier lowering effect and the threshold voltage is defined in terms of minimum channel potential barrier, The results of the developed analytic threshold-voltage model are compared with those of 2-D numerical simulation, and good agreements are obtained for the gate length down to 0.1 mu m with wide ranges of structure parameters and bias conditions.