A 2-D ANALYTIC MODEL FOR THE THRESHOLD-VOLTAGE OF FULLY DEPLETED SHORT GATE-LENGTH SI-SOI MESFETS
| dc.citation.epage | 2162 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 2156 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.citation.woscount | 16 | |
| dc.contributor.author | HOU, CS | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:01Z | |
| dc.date.available | 2014-12-08T15:03:01Z | |
| dc.date.issued | 1995-12-01 | en_US |
| dc.description.abstract | A two zone Green's function solution method is proposed to analytically model the potential distribution in the silicon film of fully depleted SOI MESFET's, in which the exact solution of 2-D Poisson's equation is obtained by using the appropriate boundary conditions, From the derived analytic 2-D potential distribution, the bottom potential in the active silicon film is used to analyze the drain-induced barrier lowering effect and the threshold voltage is defined in terms of minimum channel potential barrier, The results of the developed analytic threshold-voltage model are compared with those of 2-D numerical simulation, and good agreements are obtained for the gate length down to 0.1 mu m with wide ranges of structure parameters and bias conditions. | en_US |
| dc.identifier.doi | 10.1109/16.477774 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.477774 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1610 | |
| dc.identifier.wosnumber | WOS:A1995TH17200018 | |
| dc.language.iso | en_US | en_US |
| dc.title | A 2-D ANALYTIC MODEL FOR THE THRESHOLD-VOLTAGE OF FULLY DEPLETED SHORT GATE-LENGTH SI-SOI MESFETS | en_US |
| dc.type | Article | en_US |