Browsing by Author "HSIEH, ST"

Now showing 1 - 20 of 33

2-QUASIPARTICLE STATES IN THE INTERACTING BOSON APPROXIMATION AND THE STRUCTURE OF EVEN PT ISOTOPES
(1989-07-01)
CHUU, DS
;
HSIEH, ST
;
CHIANG, HC
;
電子物理學系
;
Department of Electrophysics
A 2-BAND INTERPRETATION OF THE HIGH-SPIN STATES IN EVEN EVEN PT ISOTOPES
(1987-10-01)
HSIEH, ST
;
CHUU, DS
;
電子物理學系
;
Department of Electrophysics
ANOMALIES OF MOMENT OF INERTIA IN OS-170-180
(1993-02-01)
CHIANG, HC
;
HSIEH, ST
;
YEN, MMK
;
CHUU, DS
;
電子物理學系
The anomalies of moment of inertia in 170-180Os are analysed in the interacting-boson-plus-fermion-pair model. The angular momentum-angular momentum interaction term (L.L) in the boson Hamiltonian is renormalized by a (1 + fL.L)- 1 factor. It was found that the renormalization facilitates the interaction parameter searching and all boson-boson and boson-fermion interaction parameters for the isotope chain can be unified. Energy levels can be reproduced quite well. The general features in the moment of inertia anomalies can be reproduced. The transition quadrupole moments are calculated and compared with other estimates.
CALCULATION OF ENERGY-SPECTRA IN N = 28 NUCLEI
(1979)
CHUU, DS
;
HAN, CS
;
WANG, MC
;
HSIEH, ST
;
電子物理學系
CALCULATIONS ON NEGATIVE-PARITY STATES IN THE NUCLEI OF A=36-40
(1981-01-01)
HSIEH, ST
;
WANG, MC
;
CHUU, DS
;
電子物理學系
;
Department of Electrophysics
DEPOSITION OF INDIUM TIN OXIDE-FILMS ON ACRYLIC SUBSTRATES BY RADIOFREQUENCY MAGNETRON SPUTTERING
(1994-07-01)
CHIOU, BS
;
HSIEH, ST
;
WU, WF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (<80-degrees-C) and low rf power (<28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 mum made these sputtered ITO films applicable to infrared mirrors.
DESCRIPTION OF ODD-MASS GD NUCLEI IN THE INTERACTING BOSON-FERMION MODEL
(1989-05-22)
CHUU, DS
;
HSIEH, ST
;
電子物理學系
;
Department of Electrophysics
DESCRIPTION OF THE EVEN TIN ISOTOPES IN A MIXING SHELL-MODEL AND IBA MODEL
(1995-04-01)
CHUU, DS
;
HSIEH, ST
;
電子物理學系
;
Department of Electrophysics
The positive parity energy levels of even Sn-108-124 isotopes are studied in terms of a mixing of shell model and interacting boson approximation model. In the calculation, the basis states consist of a pure boson configuration and N-B-1 bosons plus a fermion pair configuration, where N-B is the valence boson number outside the closed shell. The fermions are allowed to excite to the s(1/2), d(3/2), d(5/2), g(7/2) and h(11/2) single particle orbitals. The interaction Hamiltonian contains three parts: pure boson Hamiltonian, pure fermion Hamiltonian and boson-fermion mixing Hamiltonian. The calculated energy levels are compared with the observed data. The wavefunctions are used to calculate B(E2) values. It is found that the calculated energy spectra and B(E2) values agree reasonably well with the experimental values.
EFFECT OF SPUTTERING POWER ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF RF MAGNETRON-SPUTTERED ITO FILMS
(1994-06-01)
WU, WF
;
CHIOU, BS
;
HSIEH, ST
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The structural and optical properties of RF magnetron sputtered ITO films without in situ substrate heating and post-deposition annealing are investigated. The structure and orientation of ITO films strongly depends on the energy of the sputtered particles arriving at the substrate. As the sputtering power increases from 15 to 100 W, the preferred orientation of the ITC) film changes from (222) to (400). It is observed that the lattice constant of the film increases initially as sputtering power increases from 15 to 50 W and then decreases with further increase of sputtering power. The higher the sputtering power, the smaller the oxygen content of the film. The oxygen deficiency is used to explain the loss of transmittance or blackening of ITO films deposited at high sputtering power. Several material parameters, such as optical constants and energy gap, have been derived and discussed. The figure of merit of the films ranges from 81.3 to 117.6 OMEGA-1.
EFFECTIVE BOSON CALCULATIONS ON SM ISOTOPES
(1986-07-01)
HSIEH, ST
;
CHIANG, HC
;
YEN, MMK
;
CHUU, DS
;
電子物理學系
EFFECTIVE BOSON NUMBER CALCULATIONS NEAR THE Z = 64 SUBSHELL
(1990-07-01)
HAN, CS
;
CHUU, DS
;
HSIEH, ST
;
電子物理學系
;
物理研究所
EFFECTIVE INTERACTION BETWEEN NUCLEONS IN LOWER AND UPPER SD SHELL
(1977-01-01)
HAN, CS
;
CHUU, DS
;
WANG, MC
;
HSIEH, ST
;
電子物理學系
EFFECTIVE INTERACTIONS AND ENERGY-SPECTRA FOR N = 28, 50, AND 82 ISOTONES
(1978-01-01)
CHIANG, HC
;
HSIEH, ST
;
CHUU, DS
;
HAN, CS
;
電子物理學系
EFFECTIVE INTERACTIONS AND ENERGY-SPECTRA FOR N=28-NUCLEI,N=29-NUCLEI AND N=30-NUCLEI
(1978)
CHUU, DS
;
HAN, CS
;
HSIEH, ST
;
CHIANG, HC
;
電子物理學系
EFFECTIVE INTERACTIONS, COULOMB DISPLACEMENTS, AND SEPARATION ENERGIES FOR N = 50 AND N = 28 ISOTONES
(1978-01-01)
HSIEH, ST
;
WANG, MC
;
CHUU, DS
;
HAN, CS
;
電子物理學系
EFFECTS OF BOSON-FERMION MIXTURES IN PT ISOTOPES
(1994-04-01)
CHIANG, HC
;
HSIEH, ST
;
CHUU, DS
;
電子物理學系
;
Department of Electrophysics
The Pt isotopes are studied in the boson-plus-fermion-pair model. The 1i13/2, 1h9/2 and 2f5/2 fermion orbitals are included in the model space. Isotopes quite near to the closed shells are included in the calculation. It was found that significant influences to the energy levels could be produced by the small mixtures from the fermion-pair configurations. The energy spectra and moment of inertia backbendings can be reproduced quite well. The calculated B(E2) values show prominent dips at the onsets of different fermion-pair configurations.
ELECTRICAL BEHAVIOR OF LOW-POWER RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE-FILMS ON SILICON SUBSTRATE
(1994-04-01)
CHIOU, BS
;
HSIEH, ST
;
WU, WF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Indium tin oxide (ITO) films were deposited onto p-Si substrates by RF magnetron sputtering. Small sputtering powers (less-than-or-equal-to 28 W) were supplied to a one-inch diameter target, and a low substrate temperature (< 80-degrees-C) was maintained during sputtering. The electrical behavior of the ITO films was explored. The relationship (carrier mobility) a (carrier concentration)-0.64 suggests an impurity scattering mechanism for the transport of charge carriers. A linear current-voltage characteristic and a voltage-independent capacitance indicate that the low-power sputtering process does not damage the ITO/p-Si interface.
EVEN-ODD XE AND BA ISOTOPES IN THE INTERACTING BOSON-FERMION MODEL
(1989-06-01)
CHIANG, HC
;
HSIEH, ST
;
CHUU, DS
;
電子物理學系
;
Department of Electrophysics
IBA-1 STUDIES OF STRONGLY DEFORMED-NUCLEI NEAR A=150
(1990-04-01)
CHUU, DS
;
HSIEH, ST
;
電子物理學系
;
Department of Electrophysics
INTERACTING-BOSON-FERMION-APPROXIMATION DESCRIPTION OF NEGATIVE-PARITY STATES IN EVEN-ODD YB ISOTOPES
(1991-11-01)
HSIEH, ST
;
CHUU, DS
;
電子物理學系
;
Department of Electrophysics
The negative-parity energy levels of the even-odd Yb isotopes, 163Yb, 165Yb, Yb-169, Yb-171, and Yb-173, are studied systematically within the framework of the extended interacting-boson-fermion-approximation (IBFA) model in which one odd fermion is couplied with a boson core. The boson core is described with the IBA model but allowing one boson to break into a quasifermion pair. The odd fermion is assumed to be in one of the f7/2 and p3/2 single-particle orbitals while the fermion pair is allowed to occupy the single-particle orbit i13/2. It was found that the negative-parity energy levels of these even-odd Yb isotopes and the values of transition quadrupole moments for the ground-state rotational band of Yb-173 can be reproduced in fairly good agreement with the observed data.