ELECTRICAL BEHAVIOR OF LOW-POWER RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE-FILMS ON SILICON SUBSTRATE

Abstract

Indium tin oxide (ITO) films were deposited onto p-Si substrates by RF magnetron sputtering. Small sputtering powers (less-than-or-equal-to 28 W) were supplied to a one-inch diameter target, and a low substrate temperature (< 80-degrees-C) was maintained during sputtering. The electrical behavior of the ITO films was explored. The relationship (carrier mobility) a (carrier concentration)-0.64 suggests an impurity scattering mechanism for the transport of charge carriers. A linear current-voltage characteristic and a voltage-independent capacitance indicate that the low-power sputtering process does not damage the ITO/p-Si interface.