ELECTRICAL BEHAVIOR OF LOW-POWER RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE-FILMS ON SILICON SUBSTRATE

dc.citation.epage	302	en_US
dc.citation.issue	4	en_US
dc.citation.spage	297	en_US
dc.citation.volume	74	en_US
dc.citation.woscount	11
dc.contributor.author	CHIOU, BS	en_US
dc.contributor.author	HSIEH, ST	en_US
dc.contributor.author	WU, WF	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:04:02Z
dc.date.available	2014-12-08T15:04:02Z
dc.date.issued	1994-04-01	en_US
dc.description.abstract	Indium tin oxide (ITO) films were deposited onto p-Si substrates by RF magnetron sputtering. Small sputtering powers (less-than-or-equal-to 28 W) were supplied to a one-inch diameter target, and a low substrate temperature (< 80-degrees-C) was maintained during sputtering. The electrical behavior of the ITO films was explored. The relationship (carrier mobility) a (carrier concentration)-0.64 suggests an impurity scattering mechanism for the transport of charge carriers. A linear current-voltage characteristic and a voltage-independent capacitance indicate that the low-power sputtering process does not damage the ITO/p-Si interface.	en_US
dc.identifier.issn	0169-4332	en_US
dc.identifier.journal	APPLIED SURFACE SCIENCE	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/2542
dc.identifier.wosnumber	WOS:A1994NE70400002
dc.language.iso	en_US	en_US
dc.title	ELECTRICAL BEHAVIOR OF LOW-POWER RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE-FILMS ON SILICON SUBSTRATE	en_US
dc.type	Article	en_US

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