Browsing by Author "HUANG, KF"

Now showing 1 - 20 of 22

2-COLOR INFRARED PHOTODETECTOR USING GAAS/ALGAAS AND STRAINED INGAAS/ALGAAS MULTIQUANTUM WELLS
(1993-06-28)
TSAI, KL
;
CHANG, KH
;
LEE, CP
;
HUANG, KF
;
TSANG, JS
A two-color infrared detector using GaAs/A]GaAs and strained InGaAs/AlGaAs multiquantum wells is demonstrated. The response peak of the GaAs/AlGaAs quantum well is at 8 mum, and that of the InGaAs/AlGaAs quantum well is at 5.3 mum. The responsivity of the detector is 1 A/W at 8 mum and 0.27 A/W at 5.3 mum; these are the best values reported for a two-color quantum well infrared detectors (QWIPs) with peak sensitivities in the spectral regions of 3-5.3 mum and 7.5-14 mum. Single-colored 5.3 and 8 mum QWIPs were also fabricated to study the bias dependent behavior. This behavior can be explained using the concept of current continuity. Because of a higher electrical resistance, a high electric field domain is always formed first in the shorter wavelength quantum well stack.
ANOMALOUS DIFFUSION OF CD IN INSB
(1990-03-01)
TU, SL
;
HUANG, KF
;
YANG, SJ
;
電子物理學系
;
光電工程學系
CAVITY ENHANCEMENT OF RESONANT FREQUENCIES IN SEMICONDUCTOR-LASERS SUBJECT TO OPTICAL-INJECTION
(1995-12-01)
SIMPSON, TB
;
LIU, JM
;
HUANG, KF
;
TAI, K
;
CLAYTON, CM
The injection of an optical signal into a semiconductor laser biased near or above the lasing threshold modifies the coupling between the free carriers and the intracavity field. The detuning between the frequency of the injected signal and the free-running oscillation frequency and the ratio of the photon lifetime to the carrier lifetime are key parameters in determining the enhancement of the carrier-field resonant coupling frequency and the stability of the output field. Experimental results using a vertical cavity surface emitting laser biased near threshold are in agreement with calculations using a lumped-element oscillator model.
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-11-01)
HUANG, KF
;
TAI, K
;
WU, CC
;
WYNN, JD
;
電子物理學系
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-07-22)
TAI, K
;
HUANG, KF
;
WU, CC
;
WYNN, JD
;
電子物理學系
Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-07-22)
TAI, K
;
HUANG, KF
;
WU, CC
;
WYNN, JD
;
電子物理學系
Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-01-01)
HUANG, KF
;
TAI, K
;
WU, CC
;
WYNN, JD
;
電子物理學系
ELECTRICAL-PROPERTIES OF INSB METAL-INSULATOR SEMICONDUCTOR DIODES PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION
(1987-08-03)
HUANG, KF
;
SHIE, JS
;
LUO, JJ
;
CHEN, JS
;
交大名義發表
FIELD-INDUCED JUNCTION IN INSB GATE-CONTROLLED DIODES
(1991-01-01)
LAN, WH
;
TU, SL
;
CHERNG, YT
;
PANG, YM
;
YANG, SJ
InSb gate-controlled diodes were fabricated to study breakdown behavior and surface effects. I-V characteristics were measured as a function of gate voltage and temperature. The results indicated that a field-induced junction was formed as the negative bias exceeded -4 V. The field induced junction was found to have a breakdown voltage smaller than that of the metallurgical junction. Saturation of the breakdown current in the field-induced junction was also observed, which could be explained by the conducting channel effect similar to that in the metal oxide semiconductor field effect transistor (MOSFET). The reverse current was also measured as a function of temperature to study the leakage mechanism. The strong exponential temperature dependence suggested that the reverse current was dominated by the G-R mechanism.
HIGH BREAKDOWN P-CHANNEL INSB MOSFET
(1990-03-01)
TU, SL
;
LAN, WH
;
CHIOU, TS
;
YANG, SJ
;
HUANG, KF
HIGH-REFLECTIVITY ALAS0.52SB0.48/GAINAS(P) DISTRIBUTED BRAGG MIRROR ON INP SUBSTRATE FOR 1.3-1.55-MU-M WAVELENGTHS
(1989-08-17)
TAI, K
;
FISCHER, RJ
;
CHO, AY
;
HUANG, KF
;
交大名義發表
INFLUENCE OF THIN PROTECTIVE INAS LAYERS ON THE OPTICAL-QUALITY OF ALGAAS AND QUANTUM-WELLS
(1992-09-15)
TSAI, KL
;
CHANG, KH
;
LEE, CP
;
HUANG, KF
;
CHANG, Y
Influence of a thin protective but subsequently evaporated InAs layer on the regrowth of AlGaAs has been studied. It was found tha although most of the InAs could be evaporated by thermal desorption, some would react with Al0.36Ga0.64As to form InAlGaAs. These InAlGaAs islands act as potential wells for carrier recombination and dominate the photoluminescence spectrum. Transmission electron microscopy photographs show that dislocations are formed near the islands. These defects are caused by lattice mismatch between AlGaAs and InAlGaAs. These islands and defects strongly affect the optical quality of surrounding Al0.36Ga0.64As and quantum wells.
INFRARED SPECTROSCOPIC STUDY OF MERCURY-SENSITIZED PHOTO-CVD SILICON-OXIDE
(1990-06-01)
LAN, WH
;
TU, SL
;
YANG, SJ
;
HUANG, KF
;
電子物理學系
INSB P-N-JUNCTION WITH AVALANCHE BREAKDOWN BEHAVIOR
(1989-11-01)
TU, SL
;
HUANG, KF
;
YANG, SJ
;
電子物理學系
;
光電工程學系
INSTABILITY IN SURFACE EMITTING LASERS DUE TO EXTERNAL OPTICAL FEEDBACK
(1993-01-01)
CHEN, HM
;
TAI, K
;
HUANG, KF
;
KAO, YH
;
WYNN, JD
Instability in the output of dc-biased surface emitting lasers due to an external cavity effect was observed. The output power spectrum exhibited multiple peaks with spacing corresponding to exactly the round-trip delay in silica fibers with length ranging from 2 m to 2 km. The magnitude of the peaks was enhanced in the spectral region centered at the laser relaxation frequency. With increased feedback, the background of the output spectrum was found to increase, indicating the presence of optical chaos. Numerical simulation based on the rate equation analysis was found to agree with the experiment, indicating the surface emitting lasers are well described by the rate equation and are susceptible to feedback as the edge emitting lasers.
OBSERVATION OF DOMAIN PATTERNS INDUCED BY ULTRASOUND PULSES IN A NEMATIC LIQUID-CRYSTAL FILM
(1989-10-01)
CHEN, SH
;
LEE, W
;
HUANG, KF
;
電子物理學系
;
光電工程學系
PREPARATION AND CHARACTERIZATION OF SOME TIN OXIDE-FILMS
(1988-03-01)
UEN, TM
;
HUANG, KF
;
CHEN, MS
;
GOU, YS
;
電子物理學系
REACTION-MECHANISM OF MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITED SILICON-OXIDE
(1993-01-01)
LAN, WH
;
LIN, WJ
;
TU, SL
;
YANG, SJ
;
HUANG, KF
The deposition mechanism for silicon oxide (SiOx) films grown by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using silane (SiH4) and nitrous oxide (N2O) under irradiation of a low-pressure mercury lamp has been studied. An increasing-naximum-decrease pattern of the deposition rate with increasing silane partial pressure ratio (P(s)=P(SiH4)/P(total)) has been observed. Deposition rates for the SiO-like and SiO2-like films have been analyzed based on the Langmuir-Hinshelwood surface reaction theory. Rate equations were also derived. By means of the Arrhenius plots, activation energy of the surface reaction and the heat of adsorption can be determined.
RELIABILITY STUDIES OF GAIN-GUIDED 0.85 MU-M GAAS/ALGAAS QUANTUM-WELL SURFACE-EMITTING LASERS
(1994-01-01)
WU, CC
;
TAI, K
;
HUANG, TC
;
HUANG, KF
;
電子物理學系
A reliability study of gain-guided 0.85 mum GaAs/AlGaAs quantum well surface emitting lasers is reported for the first time. 32 lasers were randomly selected to operate at 25 or 50 C with bias currents up to 15 mA, about 4 times the threshold values. The power outputs of the 32 lasers showed no noticeable degradation after 2000-3000 hours of operation.
TEMPERATURE-DEPENDENCE OF TRANSPORT-PROPERTIES OF EVAPORATED INDIUM TIN OXIDE-FILMS
(1987-03-30)
HUANG, KF
;
UEN, TM
;
GOU, YS
;
HUANG, CR
;
YANG, HC