2-COLOR INFRARED PHOTODETECTOR USING GAAS/ALGAAS AND STRAINED INGAAS/ALGAAS MULTIQUANTUM WELLS

Abstract

A two-color infrared detector using GaAs/A]GaAs and strained InGaAs/AlGaAs multiquantum wells is demonstrated. The response peak of the GaAs/AlGaAs quantum well is at 8 mum, and that of the InGaAs/AlGaAs quantum well is at 5.3 mum. The responsivity of the detector is 1 A/W at 8 mum and 0.27 A/W at 5.3 mum; these are the best values reported for a two-color quantum well infrared detectors (QWIPs) with peak sensitivities in the spectral regions of 3-5.3 mum and 7.5-14 mum. Single-colored 5.3 and 8 mum QWIPs were also fabricated to study the bias dependent behavior. This behavior can be explained using the concept of current continuity. Because of a higher electrical resistance, a high electric field domain is always formed first in the shorter wavelength quantum well stack.