Browsing by Author "HUANG, MF"

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2-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAAS
(1994-05-09)
CHENG, TM
;
CHANG, CY
;
CHIN, A
;
HUANG, MF
;
HUANG, JH
Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600-900-degrees-C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications.
HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
(1994-06-27)
CHENG, TM
;
CHANG, CY
;
CHANG, TC
;
HUANG, JH
;
HUANG, MF
High-resolution x-ray analysis of Si delta-doped GaAs grown by molecular-beam epitaxy at a low substrate temperature (230-degrees-C) is presented. Superlattice satellite peaks in the rocking curve are observed for the sample annealed at 700-degrees-C for 10 min. The peak intensity increases with increasing postgrowth annealing temperature and reaches the maximum value for the 900-degrees-C annealed sample. The evolution of the x-ray rocking curves can be explained consistently by the formation of a GaAs/As superlattice during the annealing period based on the transmission electron microscope observations.
STRONG ACCUMULATION OF AS PRECIPITATES IN LOW-TEMPERATURE INGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
(1994-03-21)
CHENG, TM
;
CHIN, A
;
CHANG, CY
;
HUANG, MF
;
HSIEH, KY
Low temperature InGaAs strained quantum wells have been grown by molecular beam epitaxy and annealed at 600-900-degrees-C for 10 min. For an optimized annealing condition, arsenic precipitates can be successfully confined in the InGaAs wells and completely depleted in the GaAs barriers. The strong accumulation of As precipitates shows that the phenomena are not due to the strain effect but may be explained by the difference of interfacial energy between precipitate and matrix. The ability to control the As precipitates into two-dimensional quantum wells in LT materials has unique applications in a wide variety of devices.