2-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAAS

Abstract

Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600-900-degrees-C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications.