標題: | 2-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAAS |
作者: | CHENG, TM CHANG, CY CHIN, A HUANG, MF HUANG, JH 電控工程研究所 Institute of Electrical and Control Engineering |
公開日期: | 9-五月-1994 |
摘要: | Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600-900-degrees-C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications. |
URI: | http://dx.doi.org/10.1063/1.111559 http://hdl.handle.net/11536/2493 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.111559 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 64 |
Issue: | 19 |
起始頁: | 2517 |
結束頁: | 2519 |
顯示於類別: | 期刊論文 |